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Method for improving bump defect of porous low-k film

A thin film and semiconductor technology, applied in the field of mask technology, can solve the problem of uneven surface and achieve the effect of improving protrusion defects

Active Publication Date: 2016-01-13
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] figure 1 One problem encountered in practice with the semiconductor structure shown is that the surface of the semiconductor substrate obtained after the masking process is not flat enough

Method used

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  • Method for improving bump defect of porous low-k film
  • Method for improving bump defect of porous low-k film
  • Method for improving bump defect of porous low-k film

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Embodiment Construction

[0033] The following detailed description refers to the accompanying drawings that show by way of illustration specific embodiments in which the claimed subject matter may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the subject matter. It is to be understood that the various embodiments, although different, are not necessarily mutually exclusive. For example, a particular feature, structure, or characteristic described in connection with one embodiment may be implemented in other embodiments without departing from the spirit and scope of the claimed subject matter. Similarly, for purposes of explanation, specific quantities, materials and configurations are set forth in order to provide a thorough understanding of embodiments of the invention. However, the invention may be practiced without these specific details. In addition, it should be understood that the location or arrangement of individual elements ...

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Abstract

The invention discloses a method for improving the bump defect of a porous low-k film. According to one aspect of the invention, a method for processing a semiconductor chip is provided, comprising the steps of depositing a dielectric film on a semiconductor substrate, UV-curing the deposited dielectric film to obtain a porous low-k film, and processing the surface of the porous low-k film to form a dense film. According to the invention, the step of processing the surface of the porous low-k film comprises applying SiH4 or DEMS to the surface of the porous low-k film for immersion treatment and applying He to the surface of the porous low-k film for plasma treatment.

Description

technical field [0001] The invention relates to a masking process in a semiconductor manufacturing process, and more specifically, the invention relates to a method for improving protrusion defects of a porous low-k thin film. Background technique [0002] In the field of semiconductor technology, the masking process is an important part of patterning on the substrate. Generally, masks can be classified into soft masks and hard masks. Soft mask usually refers to photoresist material, namely photoresist. The hard mask is a mask structure obtained after etching the dielectric material layer. After the hard mask is formed, the subsequent process is to etch the underlying structure of the hard mask to form structures such as trenches, via holes, and gaps. [0003] In the context of semiconductor technology, low-k (low-k) materials generally refer to materials with a dielectric constant lower than that of silicon oxide (3.9-4.1). A typical low-k dielectric film may have a die...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F1/00
Inventor 周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP