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Method for reducing degradation caused by excess carriers in silicon substrate

A silicon substrate and degradation technology, applied in photovoltaic power generation, electrical components, climate sustainability, etc., can solve problems such as increasing recombination activity, achieve the effect of reducing lifespan degradation and improving performance

Active Publication Date: 2017-07-14
阿尔托大学理工学院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The formation of such copper precipitates increases recombination activity, which naturally has a strong negative impact on solar cell efficiency

Method used

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  • Method for reducing degradation caused by excess carriers in silicon substrate
  • Method for reducing degradation caused by excess carriers in silicon substrate
  • Method for reducing degradation caused by excess carriers in silicon substrate

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Experimental program
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Embodiment Construction

[0031] figure 1 A flow chart is shown describing a method 100 for deactivating impurities in a silicon substrate, such as copper, that cause excess carrier-induced degradation, and thereby reducing the silicon substrate used, for example, in solar cell fabrication. The minority carrier lifetime degradation caused by excess carriers in the Impurities that lead to detrimental excess carrier-induced degradation, ie in this case photo-induced degradation, can also be, for example, iron.

[0032] At the start of the method in step 110, a blank monocrystalline or polycrystalline silicon substrate is fabricated by Czochralski processing or bulk casting. The silicon substrate may contain p-type and / or n-type silicon depending on the dopants used. The p-type silicon contains, for example, boron, aluminum, gallium and / or indium, and the n-type silicon contains, for example, phosphorus and / or arsenic. When a silicon substrate contains both p-type and n-type silicon, it naturally has p...

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PUM

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Abstract

Embodiments of the invention relate to a method for reducing degradation caused by excess carriers in a silicon substrate (310), the method comprising providing a charged insulating layer (320) capable of holding charge on the silicon substrate (310), for generating a potential difference between the charged insulating layer (320) and the silicon substrate (310); and heat-treating the silicon substrate (310) so as to cause deterioration caused by excess carriers and in the silicon substrate (310) Impurities can diffuse into the boundary (330) of the silicon substrate (310) and the insulating layer (320) due to the potential difference.

Description

technical field [0001] The present application generally relates to methods for reducing degradation caused by excess carriers in silicon substrates. Background technique [0002] Silicon solar cells with efficiencies greater than 15% are generally made of polycrystalline or monocrystalline silicon which can be grown by Czochralski or floating zone techniques. Polysilicon is used when the manufacturing cost of solar cells needs to be minimized. Solar cells made from Czochralski and floating-zone silicon are comparable in cost, but floating-zone silicon is used for high efficiency applications. [0003] According to research, both the Czochralski method and the floating zone solar cell have the problem of unstable efficiency, and the efficiency tends to decrease under sunlight when the minority carrier lifetime in the solar cell is reduced. This phenomenon is known as photo-induced minority carrier lifetime degradation and is currently a serious problem limiting the efficie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/028H01L31/18H01L21/3105
CPCH01L31/028H01L21/3221H01L21/326H01L31/186Y02E10/547H01L31/1864Y02P70/50H01L31/0288
Inventor A·哈拉希尔图奈恩H·萨维恩M·V·耶里-库斯基
Owner 阿尔托大学理工学院