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Pixel unit and imaging system

A technology of pixel unit and imaging system, applied in the field of image sensor, can solve the problems of increasing pixel size, cost and complexity, etc.

Active Publication Date: 2017-12-05
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantage of this approach is that increasing the voltage swing of the transfer transistor requires additional circuitry for the pixel cell, which increases pixel size, cost and complexity

Method used

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Embodiment Construction

[0016] Methods and apparatus for implementing example pixel cells in a stacked image sensor with separate bias chips are disclosed herein. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. One skilled in the art will recognize, however, that the techniques described herein may be practiced without one or more of the specific details or with other methods, components, or materials, among others. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.

[0017] Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrase "in one instance" or "in an embodiment" in various places throughout th...

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Abstract

The present application relates to a pixel unit and an imaging system. A pixel cell includes a photodiode disposed within a first semiconductor chip to accumulate image charge in response to light incident on the photodiode. A transfer transistor is disposed within the first semiconductor chip and is coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generating circuit is disposed in the second semiconductor chip to generate a bias voltage. The bias voltage generating circuit is coupled to the first semiconductor chip to bias the photodiode using the bias voltage. The bias voltage is negative with respect to the ground voltage of the second semiconductor chip. A floating diffusion region is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.

Description

technical field [0001] The present invention relates to image sensors. In particular, embodiments of the invention relate to stacked image sensors. Background technique [0002] The image capture device includes an image sensor and an imaging lens. The imaging lens focuses light onto the image sensor to form an image, and the image sensor converts the light into an electrical signal. Electrical signals are output from the image capture device to other components of the host electronic system. For example, the electronic system may be a mobile device, computer, digital camera, medical device, and the like. [0003] There is a constant need to reduce the size of image sensors and improve the performance of image sensors. Factors that affect the performance of an image sensor pixel cell include image charge transfer efficiency, image hysteresis, and readout pixel noise. Known methods for reducing image lag include raising the floating diffusion voltage. However, one disad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14612H01L27/14634H01L27/14636H04N25/74H04N25/75
Inventor 代铁军王睿戴森·H·戴真锅宗平
Owner OMNIVISION TECH INC