Unlock instant, AI-driven research and patent intelligence for your innovation.

Nanowire structure and method of making the same

A technology of nanowires and alternating methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., and can solve problems such as resolution limitations

Active Publication Date: 2018-07-17
TAIWAN SEMICON MFG CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, smaller feature sizes may reach the resolution limit of 193nm lithography

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanowire structure and method of making the same
  • Nanowire structure and method of making the same
  • Nanowire structure and method of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship between the various embodim...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An embodiment of the present invention provides a device comprising a first group of nanowires having a first pattern, a second group of nanowires having a second pattern, a third group of nanowires having a third pattern, and a group of nanowires having a fourth pattern The fourth group of nanowires, wherein the first pattern, the second pattern, the third pattern and the fourth pattern form a repeating pattern. The invention also relates to nanowire structures and methods of making them.

Description

technical field [0001] The present invention relates to nanowire structures and methods for their manufacture. Background technique [0002] The semiconductor industry has experienced rapid growth due to the increasing integration of various electronic components (eg, transistors, diodes, resistors, capacitors, etc.). In most cases, this increase in integration results from repeated reductions in minimum feature size, which allow more components to be integrated into a given area. However, smaller feature sizes may reach the resolution limit of 193nm lithography. With the recent increase in demand for even smaller electronic devices, high resolution needs to be achieved to resolve fine, high-density, high-resolution patterns. [0003] To push lithographically limited progress and to create even smaller semiconductor devices, multiple patterning techniques (MPT) techniques are being developed. In a multiple patterning process, the layout of a semiconductor device is broken...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L21/027
CPCH01L21/0274H01L29/0669H01L29/42392H01L29/78642H01L21/3086H01L21/3088H01L27/088H01L29/0676H01L29/7827H01L21/823487B82B3/00G03F7/00H01L21/027Y10S977/857H01L29/1037H01L27/0207H01L27/0886
Inventor 傅劲逢陈德芳严佑展李佳颖李俊鸿林焕哲
Owner TAIWAN SEMICON MFG CO LTD