Semiconductor device and method of manufacturing same

Abstract

Embodiments of the invention provide a semiconductor device and a method of manufacturing the same. The semiconductor device includes a first semiconductor layer of a first conductivity type, an insulated gate structure, a first semiconductor region of a second conductivity type, a second semiconductor region of the first conductivity type, and a lightly doped semiconductor region of the second conductivity type. The insulated gate structure is formed in a trench configuration recessed into the first semiconductor layer. The first semiconductor region, the second semiconductor region, and the lightly doped semiconductor region are formed in the first semiconductor layer. The second semiconductor region contacts the first semiconductor region and the insulated gate structure. The second semiconductor region is formed on the lightly doped semiconductor region. The lightly doped semiconductor region is formed between and contacts the first semiconductor region and the insulated gate structure. A method of manufacturing a semiconductor device is also disclosed herein.

Description

technical field [0001] The disclosure relates to a semiconductor device and a manufacturing method thereof, and in particular to a semiconductor device including an insulated gate structure and a manufacturing method thereof. Background technique [0002] In general, the use of high-power switching elements is increasingly required in various applications, and thus various semiconductor elements have been developed to the extent that they can withstand large currents and / or high voltages in high-power switching elements. The above-mentioned semiconductor components also provide various degrees of performance for related parameters, such as: forward voltage drop (forward voltage drop) V FD And safe operating area (SOA), wherein the safe operating area is defined as the current-voltage range in which the power switching element can operate without failure. For example, an insulated-gate bipolar transistor (insulated-gate bipolar transistor, IGBT) is one of the aforementioned ...

AI Technical Summary

Problems solved by technology

[0003] However, although various existing IGBTs have been developed and applied, the existing IGBTs still have a large leakage current

In addition, the problem of leakage current in the existing IGBT will also lead to the formation of poor forward biased safe operating area (FBSOA) and poor short circuit safe operating area (short circuit safe operating area, SCSOA).

As a result, when the existing IGBT is applied as a high-power switching element, it still cannot provide good performance

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