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Preparation method of polythiophene polymer/inorganic semiconductor bulk heterojunction nanofiber

An inorganic semiconductor, bulk heterojunction technology, used in fiber processing, spinning solution preparation, inorganic raw material rayon, etc.

Active Publication Date: 2017-09-12
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the bulk optoelectronic heterojunction has achieved important success, the conduction and collection efficiency of photogenerated charges in polymer optoelectronic materials must be further improved

Method used

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  • Preparation method of polythiophene polymer/inorganic semiconductor bulk heterojunction nanofiber
  • Preparation method of polythiophene polymer/inorganic semiconductor bulk heterojunction nanofiber
  • Preparation method of polythiophene polymer/inorganic semiconductor bulk heterojunction nanofiber

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specific Embodiment approach 1

[0052] Embodiment 1: The preparation method of polythiophene polymer / inorganic semiconductor bulk heterojunction nanofiber is as follows:

[0053] 1. Preparation of spinning solution:

[0054] Dissolving the titanium salt precursor or tin salt precursor, iron salt precursor, and polyvinylpyrrolidone in a solvent to obtain a spinning solution,

[0055] The mass concentration of polyvinylpyrrolidone in the spinning solution is 4-10%, and the molar ratio of iron to titanium or tin is 0.5-2:1;

[0056] 2. High-pressure spinning at a voltage of 10-30kV to obtain precursor composite fibers, and then treat them at 400-800°C for 3-8 hours to obtain composite nanofibers, and then treat them in a hydrochloric acid vapor atmosphere for 10-60 minutes , the component iron is activated to obtain acid-activated nanofibers;

[0057] 3. Place the acid-activated nanofibers in the steam of thiophene monomer, 3-hexylthiophene monomer or 3,4-ethylenedioxythiophene monomer at a temperature of 25-...

specific Embodiment approach 2

[0062] Embodiment 2: This embodiment differs from Embodiment 1 in that the molar ratio of iron to titanium or tin in step 1 is 1:1. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0063] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that in Step 3, the reaction is carried out for 10 hours at a temperature of 90° C. and an air pressure of 0.1 atmosphere. Others are the same as those in the first or second embodiment.

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Abstract

A preparation method of polythiophene-type high-molecular / inorganic semi-conductor bulk-heterojunction nano-fiber relates to preparation methods of a novel composite photoelectric material, aims to improve the performance of a high-molecular photoelectric material, and comprises the following steps: 1, preparing a spinning solution; 2, carrying out high-pressure spinning and thermal treatment; 3, putting fiber obtained after the step 2 into vapor of thiophene monomer, 3-hexylthiophene monomer or 3,4-dioxy ethylthiophene; carrying out a reaction for 2 to 24 hours under the condition of 25 to 120 DEG C and 0.01 to 0.5 atm, so as to obtain the polythiophene-type high-molecular / inorganic semi-conductor bulk-heterojunction nano-fiber. The photoresponse value of the polythiophene-type high-molecular / inorganic semi-conductor bulk-heterojunction nano-fiber can be 2.27 A / W under 2V bias voltage. The preparation method belongs to the field of fiber preparation.

Description

technical field [0001] The invention relates to a preparation method of a novel composite photoelectric material. Background technique [0002] The development and research of high-performance optoelectronic materials is of great significance to the development of optoelectronics, solar cells, and photocatalytic technology. Organic conjugated (including conjugated polymer)-based optoelectronic materials have shown important application prospects and research value in recent years due to their light weight, low cost, and adjustable performance. There are differences in the photoelectric process between organic conjugated materials and inorganic semiconductors. Inorganic semiconductors directly generate photogenerated electrons and holes under the condition of light; while conjugated polymers generate a large number of photoexcitons in the body after being excited by light, that is, bond Combined electron-hole pairs, only when these excitons are effectively separated can a la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): D01F9/08D01F11/08D01D1/02D01D5/00D01D10/02C08G61/12
CPCC08G61/126C08G2261/3223C08G2261/93D01D1/02D01D5/00D01D10/02D01F9/08D01F11/08
Inventor 王威张欣桐石瑞莎崔福义
Owner HARBIN INST OF TECH