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Copper bond wire and method of making the same

A wire and wire core technology, used in semiconductor devices, rods/rods/wires/strip conductors, semiconductor/solid-state device components, etc., can solve problems such as damage and damage to the electrical structure of bonding pads

Active Publication Date: 2016-03-09
HERAEUS MATERIALS SINGAPORE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, bonding involves greater deformation and soldering of the wires in the bonding process, which can result in damage or even destruction of the electrical structure of the bond pad and the underlying component to which it is bonded.

Method used

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  • Copper bond wire and method of making the same
  • Copper bond wire and method of making the same
  • Copper bond wire and method of making the same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0122] Some copper material ("4N copper") of at least 99.99% purity is melted in the crucible. No further material was added to the melt. A wire core precursor is then cast from the melt.

[0123] The chemical composition of Cu wires was controlled using an inductively coupled plasma (ICP) instrument (PerkinElmer ICP-OES7100DV). Copper wires were dissolved in concentrated nitric acid and the solution was used for ICP analysis. Methods for testing high-purity Cu wires were established by equipment manufacturers following well-known techniques employed for bulk Cu.

[0124] The wire core precursor is then drawn in several drawing steps to form a wire core 2 with a defined diameter. In order to demonstrate the beneficial effects of the invention for different diameters, a selection of wires with different diameters was fabricated. Table 1 below shows a list of different wire diameters:

[0125]

[0126] (Table 1: Range of extension and mean particle size for different wir...

example 2

[0168] Some copper material ("4N copper") of at least 99.99% purity is melted in the crucible. A small amount of silver (Ag) is added to the melt and a uniform distribution of the added component in the copper melt is provided. The wire core precursor is then cast from the melt.

[0169] The wire core precursor is then drawn in several drawing steps to form the wire core 2 with the currently prescribed diameter of 20 μm. The cross-section of the conductor core 2 is substantially circular. It will be appreciated that wire diameter is not considered a highly accurate value due to fluctuations in the shape of the cross-section and the like. In this sense, if the wire is defined as having a diameter of eg 20 μm, the diameter is understood to be in the range of 19.5 to 20.5 μm.

[0170] By means of this process, several different samples of the inventive and comparative wires were fabricated.

[0171] sample Ag Ni Pd, Au, Pt, Cr, Al, B, Zr, Ti Ca, Ce Mg, La ...

example 3

[0202] Some copper material ("4N copper") of at least 99.99% purity is melted in the crucible. A small amount of palladium (Pd) is added to the melt and a uniform distribution of the added component in the copper melt is provided. The wire core precursor is then produced by continuously and slowly casting the melt into rods between 2mm and 25mm.

[0203] The wire core precursor is then drawn in several drawing steps to form the wire core 2 with the currently prescribed diameter of 20 μm. The pulling was carried out as a cold pulling at room temperature.

[0204] Regarding the cross-sectional shape of the wire core 2 , refer to the comments on the above examples.

[0205] By means of this process, several different samples of the inventive wire were fabricated. In a first variant, the amount of palladium in copper is adjusted to 0.89%. In the second most preferred variant, the amount of palladium is adjusted to 1.25%.

[0206] Regarding threshold values ​​of impurities of ...

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Abstract

The invention is related to a bonding wire, comprising a core with a surface, wherein the core comprises copper as a main component, wherein the core comprises copper as a main component, wherein an average size of crystal grains in the core is between 2.5 [mu]m and 30 [mu]m, and wherein a yield strength of the bonding wire is less than 120 MPa.

Description

technical field [0001] The present invention relates to a bonding wire comprising a core having a surface, wherein the core comprises copper as a main component, wherein the average size of crystal grains in the core is between 2.5 μm and 30 μm, and wherein the bonding wire has Yield strength is less than 120MPa. [0002] The invention further relates to a module comprising a first bond pad, a second bond pad and a wire according to the invention, wherein the inventive wire is connected to at least one of the bond pads by means of ball bonding. [0003] The invention further relates to a method for producing a wire according to the invention. Background technique [0004] Bonding wires are used in the manufacture of semiconductor devices to electrically interconnect integrated circuits with printed circuit boards during semiconductor device fabrication. Further, bonding wires are used in power electronics applications to electrically connect transistors, diodes, etc. to pa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/49C22C9/00
CPCC22C9/00H01L24/43H01L24/45H01L24/48H01L24/745H01L2224/05624H01L2224/05644H01L2224/4321H01L2224/45014H01L2224/45015H01L2224/45144H01L2224/45147H01L2224/45565H01L2224/45639H01L2224/45644H01L2224/45664H01L2224/45669H01L2224/48091H01L2224/48227H01L2224/48247H01L2224/48463H01L2224/48824H01L2224/48844H01L2224/85205H01L2224/859H01L2924/14H01L2924/12041H01L2224/43985H01L2224/48624H01L2224/48644H01L2924/00011H01L2924/181H01L2924/00014H01L2924/01047H01L2924/00015H01L2924/2075H01L2924/20751H01L2924/20752H01L2924/20753H01L2924/20754H01L2924/20755H01L2924/20756H01L2924/20757H01L2924/01028H01L2924/01046H01L2924/01079H01L2924/01078H01L2924/01024H01L2924/0102H01L2924/01058H01L2924/01012H01L2924/01057H01L2924/01013H01L2924/01005H01L2924/0104H01L2924/01022H01L2924/01015H01L2924/01016H01L2924/01026H01L2924/01025H01L2224/43848H01L2924/01204H01L2924/01203H01L2924/01029H01L2924/01014H01L2924/013H01L2924/00H01L2924/00013H01L2924/01004H01L2924/00012H01L2924/01033H01L2924/206H01B5/02H05K1/0213H05K1/111
Inventor 杨平熹M.萨兰加帕尼E.米尔克
Owner HERAEUS MATERIALS SINGAPORE