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A self-heating high-power integral LED package

A technology of LED packaging and high power, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency of LED chips, inhibition of LED current recession, and increased energy loss, so as to inhibit the recession phenomenon and improve the luminous effect. , the effect of increasing the area

Active Publication Date: 2017-09-29
GUANGDONG UNIV OF SCI & TECH
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  • Claims
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Problems solved by technology

In this way, under the premise of such a high-power current density, the applicant found after many experiments that it would cause two serious problems. First, the LED has a phenomenon of current suppression fading, that is, the higher the current density is, the lower the current density is. The lower the luminous efficiency of high LED chips, the higher the current density, the greater the energy loss will be.
The second is the heat dissipation problem, that is, the heat is very large, which will have a certain impact on LEDs. Therefore, the market should urgently need to solve the above two problems

Method used

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  • A self-heating high-power integral LED package
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Embodiment Construction

[0018] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments, and the implementation scope of the present invention is not limited thereto.

[0019] Such as Figures 1 to 2 As shown, a self-heating high-power integral LED package described in this embodiment includes a metal heat dissipation base a1, and a plurality of LED epitaxial wafers a2 are arranged on the metal heat dissipation base a1;

[0020] The LED outer edge sheet includes a metal substrate 1, the bottom surface of the metal substrate 1 is provided with an air inlet opening 11, and both sides of the metal substrate 1 are provided with an air outlet opening 12. The two air outlet openings 12 communicate with the air intake opening 11; the top surface of the metal substrate 1 is also extended with a convex shell 13, and the inside of the convex shell 13 is filled with a piezoelectric ceramic layer 2; the metal substrate 1 A GaN buffer ...

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Abstract

The invention discloses a self-cooling high-power integral LED package, which comprises a metal cooling base, wherein a plurality of LED epitaxial wafers are arranged on the metal cooling base; each LED epitaxial wafer comprises a metal substrate; an inlet opening is formed in the bottom surface of the metal substrate; outlet openings are formed in two side surfaces of the metal substrate; and the two outlet openings are communicated with the inlet opening. According to the self-cooling high-power integral LED package, the problem of integral package is solved; and through arrangement of cooling holes and cooling channels, the self-cooling function is achieved.

Description

technical field [0001] The invention relates to a self-radiating high-power integral LED package. Background technique [0002] At present, in the production of existing LEDs, the cost of LED chips accounts for more than half of the overall cost; reducing the size of blue LED chips, thereby reducing the overall production cost of LEDs, is currently a common approach adopted by most manufacturers. After the size of the LED chip is reduced, in order to keep the brightness unchanged, it is necessary to increase the current density input to the LED chip. In this way, under the premise of such a high-power current density, the applicant found after many experiments that it would cause two serious problems. First, the LED has a phenomenon of current suppression fading, that is, the higher the current density is, the lower the current density is. The lower the luminous efficiency of a high LED chip, the higher the current density, and the greater the energy loss. The second is th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/64H01L33/06
CPCH01L33/06H01L33/48H01L33/64H01L33/642
Inventor 严其艳刘勇求杨立波王华荣
Owner GUANGDONG UNIV OF SCI & TECH
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