Preparation method of power diode

A power diode, N-type technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of high cost

Active Publication Date: 2015-04-29
CSMC TECH FAB2 CO LTD
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  • Preparation method of power diode
  • Preparation method of power diode
  • Preparation method of power diode

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[0018] In order to make the objectives, features, and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0019] Such as figure 1 Shown is a flow chart of a method for manufacturing a power diode according to an embodiment. The preparation method includes the following steps.

[0020] Step S102, a substrate is provided, and an N-type layer is grown on the front surface of the substrate.

[0021] The material of the substrate 10 may be semiconductor materials such as silicon, silicon carbide, gallium arsenide, indium phosphide, or silicon germanium. In this embodiment, the substrate 10 has a crystal orientation N-type silicon wafer.

[0022] In this embodiment, an N-type layer 20 with a certain thickness and resistivity is epitaxially grown on the front side of the substrate 10 (the side where the front structure of the power diode is for...

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Abstract

The invention provides a preparation method of a power diode. The preparation method comprises the following steps: providing a substrate and growing an N type layer; forming a terminal protection ring; forming an oxide layer, and performing knot guiding on the terminal protection ring; forming a gate oxide layer, and depositing a polycrystalline silicon layer on the gate oxide layer; forming an N type heavily doped region; forming a P+ region; performing ion bombardment on a wafer, etching photoresist, and enlarging the photo-etched window; forming a P type body region; performing thermal annealing to activate the injected impurities; performing front metallization and back metallization. According to the preparation method of the power diode, the photo-etched window is enlarged by the ion bombardment to the photoresist which is used as a masking layer when being injected to form the P type body region; the ion bombardment time can be adjusted to control the feature size of the polycrystalline silicon photoresist, so as to adjust the length of the P type body region, namely the length of an MOS channel, and optimize the relation between the reverse leakage current and the forward voltage drop of the device.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a power diode. Background technique [0002] Diode is a rapidly developing and widely used power electronic device. Diodes can be divided into rectifier diodes, detector diodes, and limiter diodes according to their uses. Traditional rectifier diodes mainly include PN junction diodes and Schottky diodes. Among them, the PN junction diode has a large forward voltage drop and a long reverse recovery time; the Schottky diode has a small forward voltage drop and a short reverse recovery time, but its reverse leakage current is relatively high. The cost of the traditional preparation method is relatively high. Contents of the invention [0003] Based on this, it is necessary to provide a method for preparing a power diode that can optimize the relationship between the reverse leakage current and the forward voltage drop in order ...

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Application Information

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IPC IPC(8): H01L21/329
CPCH01L21/265H01L21/3065H01L29/6609
Inventor 王根毅钟圣荣邓小社周东飞
Owner CSMC TECH FAB2 CO LTD
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