Junction barrier schottky having low forward voltage drop
A Schottky potential and Schottky barrier layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low leakage current, affect the switching speed of the device, and cannot be fully considered, and achieve low positive The effect of voltage drop, optimization of electrical parameter characteristics, and high device switching speed
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[0053] figure 1 Shows a schematic cross-sectional view of an embodiment of the present invention, the following combination figure 1 The semiconductor device of the present invention will be described in detail.
[0054] A semiconductor device includes: a substrate layer 1, which is an N conductivity type semiconductor material, and a cathode is drawn out through metal on the lower surface of the substrate layer; a buffer layer 2, which is located on the substrate layer 1, is an N conductivity type semiconductor material; and a drift layer 3, On the buffer layer 2, it is a semiconductor material of N conductivity type; the lightly doped layer 4 is on the drift layer 3, and the lightly doped layer is a semiconductor material of N conductivity; the heavily doped layer 5 is on the lightly doped layer Above 4 is a semiconductor material of the N conductivity type; the suppression zone 6 is a plurality of P-type regions formed separately from each other in the lightly doped layer and t...
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