Static random access memory and its data writing method, input and output circuit

Abstract

A static random access memory and its data writing method, input and output circuit, the method includes: detecting that a certain strobe signal line is selected, and the strobe signal line distinguishes between writing and reading; according to the selected Strobe the signal line, select the bit line corresponding to it; the selected bit line is respectively connected to the forward direction of the control circuit connection line and the reverse direction of the control circuit connection line; change the forward direction of the control circuit connection line or the control circuit connection line according to the data to be written The voltage of the reverse connection line; the voltage difference between the positive direction of the control circuit connection line and the reverse direction of the control circuit connection line is amplified to the power supply voltage through the sense amplifier; via the selected bit line, the output of the sense amplifier Data is written to target memory cells in the memory cell array. In the present invention, the multiplexing rate of each component in the circuit is higher in the process of writing and reading, so that writing and reading can be realized by using the same circuit, and the space occupation of the input and output circuits is reduced.

Description

Technical field [0001] The present invention relates to the field of integrated circuit technology, in particular to a static random access memory and its data writing method and input and output circuit. Background technique [0002] Random access memory (Random Access Memory, RAM) can be divided into static random access memory (Static Random Access Memory, SRAM) and dynamic random access memory (Dynamic Random Access Memory, DRAM). Among them, the static random access memory can save its internally stored data as long as it is powered on, without periodic updates, and the writing and reading speeds are much faster than the dynamic random access memory. But its integration level is low, each memory cell of dynamic random access memory only needs one transistor and one small capacitor, and each memory cell of static random access memory needs two to ten transistors (the mainstream is six or eight) Plus some related circuits. Therefore, under the same capacity, the static rando...

AI Technical Summary

Problems solved by technology

At this time, in order to avoid occupying the wiring space of the surrounding input and output circuits, the height of the circuit can only be increased, which eventually leads to an increase in the height of the entire SRAM

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