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Pad printing plate for offset printing and preparation method thereof

A pad printing plate and offset printing technology, applied in the field of pad printing plates for offset printing and their preparation, can solve the problems of printing deterioration in the intersecting parts, and achieve the effect of improving the printing edge

Active Publication Date: 2018-06-26
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Therefore, the present invention has been made in an effort to provide a pad printing plate for offset printing and a method for preparing the same, which can solve the problem when printing patterns with different line widths or pitches when preparing a pad printing plate. Problem of printing deterioration on the cross section caused by touching the bottom

Method used

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  • Pad printing plate for offset printing and preparation method thereof
  • Pad printing plate for offset printing and preparation method thereof
  • Pad printing plate for offset printing and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] After coating the photoresist on the Cr glass, a groove pattern including a mesh pattern is formed on the glass by sequentially performing an exposure process, a development process, a Cr etching process and a hydrofluoric acid etching process. In this case, the line width of the trench pattern was 3 μm, the etching depth was 0.6 μm, and the ratio of the maximum line width of the intersection portion to the etching depth of the intersection portion was 5.

[0067] The conductive pattern according to Example 1 is schematically below image 3 Indicated.

Embodiment 2

[0069] Example 2 was implemented in the same manner as in Example 1 except that the etching depth of Example 1 was controlled to 0.3 μm. In this case, the ratio of the maximum line width of the intersecting portion to the etching depth of the intersecting portion was 10.

[0070] The conductive pattern according to Example 2 is schematically below Figure 4 Indicated.

Embodiment 3

[0072] Example 3 was implemented in the same manner as in Example 1 except that the etching depth of Example 1 was controlled to 0.2 μm. In this case, the ratio of the maximum line width of the intersecting portion to the etching depth of the intersecting portion was 15.

[0073] The conductive pattern according to Example 3 is schematically below Figure 5 Indicated.

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Abstract

The present application relates to a cliche for offset printing and a method for preparing the same. The cliche for offset printing according to an embodiment of the present application is a cliche for offset printing which includes the pattern of a groove part. The pattern of the groove part includes a lattice pattern comprising the lines of the groove part. The lattice pattern includes an intersection part formed by the contact or intersection of arbitrary lines among the lines of the groove part. The ratio of the maximum linewidth of the intersection to the etch depth of the intersection is less than 25. So, the deterioration of printing in the intersection part can be prevented.

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2014-0130602 filed with the Korean Intellectual Property Office on Sep. 29, 2014, the entire contents of which are hereby incorporated by reference. technical field [0003] The invention relates to a pad printing plate for offset printing and a preparation method thereof. Background technique [0004] In the manufacture of flat panel displays (FPD) such as liquid crystal displays (LCD) or plasma display panels (PDP), it is necessary to form various types of patterns (such as electrodes or black matrices, color filters, partition walls) , and thin film transistors) process. [0005] As a process of forming a pattern, a method for forming a pattern by obtaining a photoresist pattern selectively removable by exposure and development by using a photoresist and a photomask, and using the photoresist pattern is often used. The photomask pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B41F13/193B41F17/00
CPCH01L21/0273
Inventor 李东炫黄智泳李承宪徐汉珉林枪润
Owner LG CHEM LTD