Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of thin film transistor, array substrate, its manufacturing method and display device

A technology for thin film transistors and manufacturing methods, which is applied in the fields of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of low production efficiency and many times of using masks, so as to simplify the production process, save production costs, reduce The effect of composition times

Active Publication Date: 2019-06-07
BOE TECH GRP CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a thin film transistor, an array substrate, a manufacturing method thereof, and a display device, so as to solve the existing problems of using masks frequently and low production efficiency when manufacturing thin film transistors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of thin film transistor, array substrate, its manufacturing method and display device
  • A kind of thin film transistor, array substrate, its manufacturing method and display device
  • A kind of thin film transistor, array substrate, its manufacturing method and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The specific implementation manners of the thin film transistor, the array substrate, the manufacturing method thereof, and the display device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0046] The film thicknesses of various layers and the shapes and sizes of the regions in the drawings do not reflect the true proportions of the thin film transistors, but are only intended to schematically illustrate the content of the present invention.

[0047] A method for manufacturing a thin film transistor provided by an embodiment of the present invention includes the following steps: forming patterns of an active layer, source and drain electrodes, and an etch barrier layer on a base substrate through a patterning process, and the etch barrier layer covers The active layer is located between the source and drain electrodes.

[0048] In the manufacturing method of the above-mentioned thin f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a thin film transistor, an array substrate, a manufacturing method thereof, and a display device. Patterns of an active layer, source and drain electrodes, and an etching barrier layer are formed through a patterning process, and the etching barrier layer covers the active layer. layer and is located between the source and drain, that is, the patterning of the three patterns of the active layer, source and drain, and the etch stop layer is simultaneously completed through a single patterning process, which reduces the number of patterning in the thin film transistor manufacturing process and simplifies the The production process saves the production cost.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, an array substrate, a manufacturing method thereof and a display device. Background technique [0002] The 21st century is the era of flat panel display in the field of display. Display devices such as liquid crystal display panels (LCD, Liquid Crystal Display), electroluminescence (EL, electroluminescence) display panels, and electronic paper are well known. These display devices have a thin film transistor (TFT, Thin Film Transistor) that controls the switching of each pixel, wherein the TFT can be divided into top-gate TFT and bottom-gate TFT according to different structures. [0003] Taking the bottom-gate TFT as an example, the manufacturing process is as follows: first, the pattern of the gate is formed on the substrate through a patterning process, and the gate insulating layer is formed on the pattern of the gate; The patterning process forms t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/786H01L27/12G02F1/1362
CPCG02F1/1362H01L27/12H01L29/66742H01L29/7869G02F1/1368H01L29/66969H01L27/1288H01L29/78696H01L29/786H01L21/02565H01L21/0273H01L21/425H01L21/47635H01L27/1225H01L29/24H01L29/45
Inventor 宁策杨维
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com