A miniaturized millimeter-wave transceiver component based on high-temperature pressureless seamless sintering technology
A transceiver component, millimeter wave technology, applied in electrical components, transmission systems, magnetic field/electric field shielding, etc., can solve the problems of narrow communication frequency band, complex structure, large volume, etc., to widen the communication frequency band, reduce the volume, and improve performance parameters Effect
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[0017] Below in conjunction with accompanying drawing and embodiment, content of the invention will be further described:
[0018] In the existing technology, this product uses more MMIC chips, and the MMIC chips are all made of 99.6% aluminum oxide substrate material. The expansion coefficient of the substrate material is 7.5. The shielding box selected by the existing millimeter wave transceiver components is basically For copper or aluminum alloy, the expansion coefficient of the profile is about 20, which is quite different from the expansion coefficient of the substrate material, so it is difficult to carry out high-temperature seamless sintering. At the same time, the MMICs of the existing millimeter-wave transceiver components are connected by a microstrip printed board. The microstrip printed board and the MMIC chip are pasted on the shielding box body through conductive silver paste. The conductive silver paste is unevenly coated, and the thickness of the MMIC chip ( ...
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