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LED array

A technology of light-emitting diodes and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large volume, increased lighting cost, low AC-DC conversion efficiency, etc.

Active Publication Date: 2018-11-20
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the addition of electronic components such as rectification and step-down will not only increase the cost of lighting, but also the low AC-DC conversion efficiency and large size of electronic components such as rectification and step-down will affect the reliability of LEDs in daily lighting applications. and service life

Method used

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Embodiment 1

[0036] Embodiment 1 discloses that the LED array 1 is composed of 3 LED units. Its structural cross-sectional diagram is shown in Figures 1A-1I As shown, the top view of the structure is shown in Figure 1A'-1G' shown. A method for manufacturing a light emitting diode array 1, comprising the following steps:

[0037] 1. Provide a growth substrate 11, and form an epitaxial structure on the growth substrate 11, wherein the epitaxial structure includes a first conductivity type semiconductor layer 12, an active layer 13, and a second conductivity type semiconductor layer 14, such as Figure 1A and Figure 1A' shown.

[0038] 2. Then etch part of the epitaxial structure of the first region (I) and the second region (II) to form a plurality of trenches 15, wherein the unetched epitaxial structure forms a plurality of platforms 16; and the third region (III) The epitaxial structure is not etched, as Figure 1B and Figure 1B' shown.

[0039] 3. Form a conductive connection l...

Embodiment 2

[0046] Embodiment 2 discloses that the LED array 2 is composed of 3 LED units. Its structural cross-sectional diagram is shown in Figure 2A-2I As shown, the top view of the structure is shown in Figure 2A'-2G' shown. The manufacturing method of light-emitting diode array 2 comprises the following steps:

[0047] 1. Provide a growth substrate 11, and form an epitaxial structure on the growth substrate 11, wherein the epitaxial structure includes a first conductivity type semiconductor layer 12, an active layer 13, and a second conductivity type semiconductor layer 14, such as Figure 2A and Figure 2A' shown.

[0048] 2. Then etch part of the epitaxial structure to form a plurality of trenches 15, wherein the unetched epitaxial structure forms a plurality of platforms 16, such as Figure 2B and Figure 2B' shown.

[0049] 3. Form a conductive connection layer 17 on some areas of the plurality of platforms 16, wherein the platform area not covered by the conductive conn...

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Abstract

The invention discloses a light-emitting diode array. The light-emitting diode array is composed of N (N≧3) light-emitting diode units, including: a permanent substrate; an adhesive layer located on the permanent substrate; and a second conductive layer located on the adhesive layer. on; the second separation layer is located on the second conductive layer; the crossover metal layer is located on the second separation layer; the first separation layer is located on the crossover metal layer; the conductive connection layer is located on the first separation layer; The epitaxial structure is located on the conductive connection layer; the first electrode is located on the epitaxial structure. The light-emitting diode units are electrically connected to each other through the bridge metal layer.

Description

[0001] This application is a divisional application of an invention patent application with an application date of April 25, 2011, an application number of 201110102886.7, and an invention title of "Light Emitting Diode Array". technical field [0002] The invention relates to a light-emitting diode array, in particular to a light-emitting diode array composed of N (N≧3) light-emitting diode units. Background technique [0003] In recent years, due to the advancement of epitaxy and process technology, light emitting diodes (light emitting diodes, referred to as LEDs) have become one of the solid-state lighting sources with great potential. Due to the limitations of the physical mechanism, LEDs can only be driven by direct current. Therefore, any lighting design using LEDs as light sources needs to be equipped with electronic components such as rectification and step-down to convert the alternating current directly provided by the power company into the usable LED. DC power s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15
CPCH01L27/15
Inventor 周理评杨於铮叶瑞鸿
Owner EPISTAR CORP