A material transfer system compatible with silicon wafers of various processes

Abstract

The invention discloses a material transport system compatible with multiple process silicon wafers. The material transport system comprises a silicon wafer storage unit, a manipulator unit and a pre-alignment unit, wherein the pre-alignment unit is used for carrying out centering orientation on the silicon wafers and comprises a linear module, a lifting module, a rotating module and a centering table; the linear module and the centering table are fixed to a bottom plate; the lifting module is fixed to the linear module; the linear module drives the lifting module to carry out horizontal motion; a rotating shaft of the rotating module is fixed to the lifting module; the lifting module drives the rotating module to carry out vertical motion; the rotating module can drive the silicon wafers thereon to carry out rotary motion; the rotating module is arranged on the centering table in a penetrating manner; when the rotating module is located at the highest position, the upper surface of the rotating module is higher than that of the centering table; when the rotating module is located at the lowest position, the upper surface of the rotating module is lower than the lower surface of the centering table.

Description

technical field [0001] The invention relates to the field of integrated circuit equipment manufacturing, in particular to a material transmission system compatible with various process chips. Background technique [0002] With the development of science and technology and the rapid progress of lithography technology, more and more process silicon wafers appear on the market, such as the production of CV (Cavity, glass), LE (Lithography-Etch, keys without scribed grooves) bonding sheet), LL sheet (Lithography-Lead, bonding sheet engraved with a scribe groove), SMF sheet (SoldMask Formation, bonding sheet coated with insulating glue between processes), bonding sheet, ultra-thin sheet, large Warped silicon wafers, etc., the silicon wafers of various processes are quite different. For example, TSV (Through-silicon-via, bonding technology sheet) is divided into several layers of technology: [0003] 1. CV layer: apply green paint to the glass sheet to expose the scribed groove;...

AI Technical Summary

Problems solved by technology

[0010] After the layer-by-layer process, the silicon wafer (or wafer) will undergo various changes, such as the bonding of the bonding sheet is not concentric; the edge is worn or edged; there is an unscraped film on the edge; the glass sheet is translucent Etc. In this case, the notch (gap) on the silicon wafer will not penetrate, be damaged, be filled or covered by metal or glue, have metal lines, scribe grooves and other information missing.

The traditional through-beam pre-alignment centering and orientation is looking for notch information. Based on incorrect notch information, the pre-alignment criterion cannot accurately center the orientation, and the accuracy of the film loading will not be guaranteed.

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