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A data reading method and device

A technology for reading data and reading information, which is applied in the field of ROM processing and can solve problems such as slow reading speed

Active Publication Date: 2019-06-04
SPREADTRUM COMM (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When the voltage value on the bit line after pull-down is greater than 500mV, it is determined that "1" is stored in the ROM cell; when the voltage value on the bit line after pull-down is less than 500mV, it is determined that "0" is stored in the ROM cell. After the pull-down discharge method will make the reading speed slow

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  • A data reading method and device

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Embodiment Construction

[0041] In order to enable those skilled in the art to better understand the present invention, the following briefly introduces the technical terms used in the embodiments of the present invention.

[0042] Redundancy: refers to the additional voltage or amount of time reserved when the memory unit is read, in order to ensure that information can still be read correctly from the ROM unit under various circumstances. For example, when reading a ROM cell, the detection voltage is 400mV. When reading "1", the bit line (BL) voltage can be read as long as it is higher than 400mV. However, in actual design, the bit line voltage is kept at Nearly 700mV high voltage, 700mV-400mV=300mV is the voltage redundancy for reading "1". Correspondingly, when reading "0", the bit line voltage will be pulled down to nearly 100mV, then 400mV-100mV=300mV is the voltage margin for reading "0". This redundancy will ensure that information can still be read correctly from the ROM cell under various c...

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Abstract

The invention provides a data reading method and apparatus. The data reading method comprises the following steps: when a ROM unit storing 1 is read on a bit line, charging the bit line; controlling the source voltage of the ROM unit storing 1 and the source voltage of other ROM units connected with the bit line to be decreased to minimal voltage from reference voltage; controlling the source voltage and drain voltage of other ROM units not connected with the bit line to be maintained at the reference voltage; and reading information 1 from the ROM unit storing 1 when a difference between the voltage of the charged bit line and the reference voltage is in a preset voltage range. Thus, electric leakage of a ROM unit storing 0 can be reduced and the amount of the voltage of the bit line decreased by other ROM unit storing 0 can be reduced, so redundancy in reading of 1 is increased; and charging time for the bit line is decreased, so a reading speed is increased.

Description

technical field [0001] The invention relates to the field of ROM (Read Only Memory, read-only memory) processing, in particular to a data reading method and device. Background technique [0002] The ROM unit is the smallest ROM device used to store information. Usually, a ROM unit can only store 1 bit of information, that is, a ROM unit can only display one of the two states of "0" and "1". At present, a plurality of ROM units can be connected through a bit line, and information stored in the ROM units can be read through the bit line through an inverter. [0003] When the ROM cell is not read, its bit line is low level "0". After the reading starts, the bit line is first charged to a high level "1", and then the bit line is pulled down and discharged through the ROM cell. Based on The voltage value on the bit line after the pull-down is used to judge the information stored in the ROM unit and read it with an inverter. When the voltage value on the bit line after pull-down...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C17/18
Inventor 于跃王林黄瑞锋吴守道
Owner SPREADTRUM COMM (SHANGHAI) CO LTD