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Laser induced CVD equipment

A technology of laser induction and equipment, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of difficult control of the reaction process, waste of raw materials, etc., and achieve the effect of monomolecular layer growth

Active Publication Date: 2018-07-31
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to overcome the above defects, the present invention provides a laser-induced CVD equipment to solve the problems of difficult control of the reaction process and large waste of raw materials in the current chemical vapor deposition process

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Embodiment Construction

[0037] In conjunction with the accompanying drawings, the present invention is described in detail, but the scope of protection of the present invention is not limited to the following examples, that is, all simple equivalent changes and modifications made with the patent scope of the present invention and the content of the specification are still patents of the present invention. covered.

[0038] Such as Figure 1-4 As shown, a laser-induced CVD device includes a laser irradiation unit 1 , a vacuum cavity 2 and a gas delivery unit 3 .

[0039] The vacuum chamber 2 is connected to a vacuuming device to obtain vacuum, and a sample fixing device 21 for fixing the substrate to be deposited with a thin film is arranged in the vacuum chamber. The back vacuum of the vacuum chamber is 1.0×10 -4 Pa. The vacuuming equipment includes a mechanical pump 41 and a molecular pump 42 for vacuuming, and a vacuum gauge 43 and a vacuum gauge for checking the degree of vacuum.

[0040] The ...

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Abstract

The invention discloses a laser-induced CVD (chemical vapor deposition) device, comprising a vacuum chamber, an air pumping system, a vacuometer, a gas delivery system and a laser device, wherein the vacuum chamber is an occasion where chemical reaction occurs, the gas delivery system is configured to deliver reacted materials into the vacuum chamber, an energy source is provided for the occurrence of the chemical reaction by means of laser, the air pumping system is configured to ensure a vacuum environment of the chemical reaction, and the vacuometer is configured to test a vacuum degree in the vacuum chamber. The gas delivery system employs pulse inlet and a special pipe orifice design; the special pipe orifice design ensures gas to uniformly enter the vacuum chamber at a certain flow rate, and can realize entrance of the gas in the vacuum chamber in a manner of molecular flow in combination with optimized gas flow and vacuum degree, and the pulse inlet can further realize accurate control of the gas. According to the pulse inlet and the special pipe orifice design in the invention, monomolecular-layer CVD of polymers can be realized under the function of the laser.

Description

technical field [0001] The invention relates to a thin film preparation device, in particular to a laser-induced CVD device, which realizes the growth of a polymer monomolecular layer under the laser-induced effect. Background technique [0002] Chemical Vapor Deposition (CVD) methods are traditional techniques for the preparation of thin films for the deposition of a wide variety of materials, including a wide range of insulating materials, most technical materials and metal alloy materials. The principle is to use gaseous precursor reactants to decompose some components in the gaseous precursor through chemical reactions between atoms and molecules, and react with each other to deposit and form a thin film on the substrate. [0003] However, the existing chemical vapor deposition methods mainly use methods such as electric heating to promote the occurrence of chemical reactions, and these methods cannot accurately control the process of chemical reactions. [0004] In add...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/44
CPCC23C16/44C23C16/45523
Inventor 吴卫东彭丽萍王雪敏黎维华樊龙蒋涛王新明湛治强沈昌乐阎大伟赵妍邓青华
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS