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Wafer bonding method

A wafer bonding and wafer technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems of poor uniformity of bonded wafers, improve performance, improve uniformity, and optimize bonds. combined twist effect

Inactive Publication Date: 2016-09-21
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a wafer bonding method to solve the problem of poor uniformity of existing bonded wafers

Method used

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Embodiment Construction

[0025] The wafer bonding method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0026] Such as figure 1 As shown, the present invention discloses a wafer bonding method, including:

[0027] Step S10: Provide a first wafer 10 and a second wafer 20;

[0028] Step S20: Provide a negative pressure environment, stack the first wafer 10 and the second wafer 20, and apply at least one pressure to the center of the first wafer 10 and the second wafer 20 On area 30.

[0029] Press below figure 1 The shown process is combined with the schematic diagram...

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Abstract

The invention provides a wafer bonding method. The method comprises the steps of: providing a first wafer and a second wafer; and providing a negative pressure environment, placing the first wafer and the second wafer in a stacking way, and applying at least one pressure on a central area of the first wafer and the second wafer. According to the wafer bonding method provided by the invention, the bonding torsion resistance of an exterior area of a bonded wafer can be optimized by providing the negative pressure environment, and the bonding torsion resistance of the central area of the bonded wafer can be optimized by applying at least one pressure, so that the overall optimization of the wafer bonding torsion resistance can be realized, thereby improving the uniformity of the bonded wafer in the subsequent process and improving the performance of products.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer bonding method. Background technique [0002] After half a century of rapid development, microelectronics technology and information technology based on microelectronics technology have had a revolutionary impact on the development of human society. However, the problems that must be faced today are: the physical limits of traditional transistors are constantly approaching, the manufacturing technology of smaller feature sizes is becoming more and more difficult, the power consumption of integrated circuits is increasing, and the investment of fabs is rising rapidly. Under this circumstance, how to maintain the continuous development of microelectronics technology at the speed described by Moore's Law has become a problem that the entire industry is trying to solve today. [0003] The emergence of three-dimensional integrated circuits provides a new technica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L21/60
CPCH01L21/50H01L24/02H01L24/03H01L24/07H01L2224/038
Inventor 邹文胡胜
Owner WUHAN XINXIN SEMICON MFG CO LTD
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