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Semiconductor device and method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as brazing damage and lead breakage of power components, achieve good heat dissipation characteristics, and improve heat dissipation. The effect of efficiency

Active Publication Date: 2019-05-28
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, there is a need for a structure to support the enlarged heat sink, or there is a concern that the heat sink will swing due to the vibration of the unit, and force will be applied to the power element, leading to breakage of the lead wire of the power element or damage to the soldered part.

Method used

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  • Semiconductor device and method for manufacturing semiconductor device
  • Semiconductor device and method for manufacturing semiconductor device
  • Semiconductor device and method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0034] figure 1 Is an exploded perspective view showing the control device as the semiconductor device of the first embodiment, figure 2 Is a cross-sectional explanatory view of the semiconductor device, image 3 It is a perspective view showing a spacer of the semiconductor device of the first embodiment. In addition, Figure 4 Is a perspective view showing a power element that uses the semiconductor device of the first embodiment to dissipate heat, Figure 5 Is a perspective view showing the heat sink of the semiconductor device of the first embodiment, Image 6 It is a cross-sectional explanatory view of the wiring board of the semiconductor device of the first embodiment. The control device 100 of the first embodiment is configured to dissipate heat from the spacer 40 provided at the lower part of the power element 10, and heat from the spacer 40 to the solder forming surface of the wiring board 30, that is, the back surface 30B side provided by the distribution The heat di...

Embodiment approach 2

[0052] In the first embodiment, the spacer 40 is connected to the pattern of the wiring layer 35 of the wiring substrate 30 by the solder layer 60 to transfer heat, but when the wiring layer 35 is formed on both sides of the wiring substrate 30 Therefore, even if the spacer 40 and the wiring layer 35 of the wiring board 30 are not fixed by the solder layer 60, heat can be conducted. Figure 7 Is an exploded perspective view showing the control device 100 as the semiconductor device of the second embodiment, Figure 8 Is a cross-sectional explanatory view of the semiconductor device, Picture 9 It is a cross-sectional explanatory view of the wiring board of the semiconductor device of the second embodiment.

[0053] Such as Picture 9 As shown, the element mounting surface 30A of the wiring substrate 30 on which the power element 10 is mounted is provided with a pattern of a wiring layer 35A in contact with the spacer 40. The wiring layer 35A is provided with a plurality of throu...

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PUM

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Abstract

A semiconductor device includes: a wiring board 30 including an insulating board 31 and a wiring layer 35, the insulating board having an element mounting surface 30A, which is a first main surface, and a back surface 30B, which is a second main surface on the opposite side of the element mounting surface 30A, the wiring layer being formed on the back surface 30B and including a wiring portion 35C and a heat dissipation portion 35H; a power element 10 that is a semiconductor element, is mounted on the element mounting surface 30A of the wiring board 30, and is connected to the wiring portion 35C; a spacer 40 that is interposed between the power element 10 and the element mounting surface 30A of the wiring board 30 and is connected to the back-surface-side heat dissipation portion 35H; and a heatsink 20 that sandwiches, together with the spacer 40, the power element 10 and is secured to the spacer 40.

Description

Technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly to a heat dissipation structure of a power element. Background technique [0002] In the past, in control devices, heat sinks or spacers have been used in order to dissipate heat from high heating elements such as power elements. For example, Patent Document 1 discloses a structure in which a spacer is arranged under an element on which a heat sink is mounted. Patent Document 1 has a structure in which spacers are used to align the height of the heat dissipation surface of the element, and heat dissipation is performed only from the heat sink arranged on the upper surface side of the element. [0003] In addition, Patent Document 2 also discloses a device that is sandwiched between a base portion for cooling a heating element and a holding portion constituting a heat sink and fixed to a printed circuit board. [0004] Patent Docu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/367H01L23/498H01L21/50
CPCH01L23/4006H01L21/4882H01L23/367H01L2023/4031H01L2023/4056H01L2023/4087
Inventor 菊川觉
Owner MITSUBISHI ELECTRIC CORP