Novel drive circuit suitable to multiple semiconductors in parallel connection

A semiconductor and parallel technology, applied in electrical components, output power conversion devices, etc., can solve the problems of high cost and large volume, and achieve the effect of reducing the requirements of structural consistency, reducing volume, and improving the level of current sharing.

Inactive Publication Date: 2016-11-09
HANGZHOU FIRSTACK TECH
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  • Abstract
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a driving circuit suitable for multi-parallel connection of semiconductors. By adopting the signal isolation unit and power isolation unit set up by the master and

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  • Novel drive circuit suitable to multiple semiconductors in parallel connection
  • Novel drive circuit suitable to multiple semiconductors in parallel connection

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Embodiment Construction

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0021] see figure 2 , is shown as a functional block diagram of a drive circuit 10 suitable for multiple semiconductor parallel connections according to an embodiment of the present invention, which is used to drive any multiple semiconductor parallel loads, including one main signal isolation unit 1011 and one main power isolation unit connected to the host computer control system The unit 1012 and the n-way slave signal isolation unit 1021 and ...

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Abstract

The invention discloses a drive circuit suitable for multiple semiconductor parallel connections, which is used to drive any multiple semiconductor parallel loads, including one main signal isolation unit and one main power isolation unit connected to the upper computer control system and n One-way slave signal isolation unit and n-way slave power isolation unit, the drive unit is connected to the semiconductor, the main signal isolation unit isolates the signal obtained from the upper computer control system, and at the same time inputs the isolated signal into n slave signal isolation units; the main signal isolation unit The power signal obtained by the power supply of the power isolation unit is isolated, and at the same time, the isolated power is output to n slave power isolation units. The present invention is used to adopt the signal isolation unit and the power isolation unit with the master-slave arrangement, only the main signal isolation unit and the main power isolation unit need to meet the high insulation withstand voltage setting, which solves the problem of large volume and high cost of the traditional multi-semiconductor parallel drive question.

Description

technical field [0001] The invention belongs to the technical field of IGBT drive, and in particular relates to a novel drive circuit suitable for parallel connection of any number of semiconductors. Background technique [0002] see figure 1 , which shows the driving principle diagram of parallel connection of multiple semiconductors in the prior art. Each semiconductor in parallel corresponds to an independent driving board. The driving board is provided with a signal isolation unit and a power isolation unit. In the driving structure set above, there are the following technical problem: [0003] (1) For each parallel semiconductor, it is necessary to configure the same drive all the way, resulting in large volume and high cost; [0004] (2) Since each drive is the same, it is determined that the insulation withstand voltage of each drive must be set according to the highest standard, which increases the complexity and cost of the system; [0005] (3) Drivers with highe...

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Application Information

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IPC IPC(8): H02M1/088
CPCH02M1/088
Inventor 施贻蒙李军王文广徐晓彬
Owner HANGZHOU FIRSTACK TECH
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