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drive unit

A driving device and driving capability technology, applied in output power conversion devices, pulse technology, electronic switches, etc., can solve the problems of switching speed deviation, switching loss deviation, switching loss deviation, etc., to reduce the layout area and reduce parts. The number of pieces, the effect of integration

Active Publication Date: 2018-10-30
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in Patent Document 1, in order to control the gate current of the power switching element, a large number of MOSFETs, resistors, etc. are required
Therefore, the circuit scale, that is, the layout area becomes larger
[0007] In addition, the technology of Patent Document 1 is a method of controlling the gate current based on the resistance value of the resistor connected to the gate of the power switching element, so the variation in the threshold voltage due to the manufacturing variation of the power switching element causes a change in the switching speed. deviation, the switching loss produces a deviation
That is to say, there are problems such as: the switching loss deviates from the standard stipulated in the specification, etc., and the yield decreases

Method used

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no. 1 approach

[0023] Initially, referring to figure 1 , the driving device according to this embodiment will be described.

[0024] Such as figure 1 As shown, the drive device 100 controls the drive of an insulated gate bipolar transistor (IGBT) 200 serving as a power switching element that drives a load 300 .

[0025] The drive device 100 includes an on-side circuit 110 and an off-side circuit 120 .

[0026] The on-side circuit 110 and the off-side circuit 120 are connected in series between a power supply and GND (ground), and the gate of the IGBT 200 is connected to an intermediate point thereof. The on-side circuit 110 is constituted by a PMOS transistor, and the power supply voltage Vcc is applied to the gate of the IGBT 200 when the PMOS transistor is in an on state. As a result, IGBT 200 is turned on, a current flows between the collector and emitter of IGBT 200 , and electric power is supplied to load 300 .

[0027] The off-side circuit 120 has two NMOS transistors (Tr1, Tr2). ...

no. 2 approach

[0037] The driving device 100 according to this embodiment is such as image 3 As shown, the off-side circuit 120 includes a gate voltage determination circuit 124 , a drive capability switching power supply 125 , and drive capability switching switches SW1 and SW2 in addition to those in the first embodiment.

[0038] First, refer to image 3 , the constituent elements of the drive device 100 according to the present embodiment will be described.

[0039] Gate voltage judging circuit 124 compares the gate voltage of IGBT 200 with a predetermined threshold (hereinafter referred to as gate voltage judging threshold V1), and based on the magnitude relationship between them, turns on the drive capability switching switches SW1 and SW2 described later. Disconnect to switch.

[0040]The driving capability switching power supply 125 is connected in parallel with the operational amplifier 121 with respect to the gate of the sense MOS transistor Tr2. In the driving capability switc...

no. 3 approach

[0052] The driving device 100 according to this embodiment is such as Figure 5 As shown, a protection circuit 130 is provided in addition to the elements in the second embodiment.

[0053] First, refer to Figure 5 , the constituent elements of the drive device 100 according to the present embodiment will be described.

[0054] The protection circuit 130 has: a MOS transistor Tr3 for protection; constant current circuits P1, P2 for supplying drain current to the MOS transistor Tr3 for protection; The current supply is controlled; and the collector current detection unit 140 detects the collector current of the IGBT 200 by sensing the current of the emitter terminal SE.

[0055] The gate of the protective MOS transistor Tr3 is connected to the gate of the main MOS transistor Tr1 of the off-side circuit 120 via the switch SW5, and constitutes a current mirror with respect to the main MOS transistor Tr1. Therefore, by controlling the drain current of the protection MOS transi...

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PUM

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Abstract

A driving device is provided with an off-side circuit (120) for controlling the gate current of a power switch element and performing an off operation. The off-side circuit has: a main MOS transistor (Tr1); a sense MOS transistor (Tr2), which regulates the drain current of the main MOS transistor; and a sense current control circuit, which controls the drain of the sense MOS transistor Current control is fixed. The sensing current control circuit has: a reference power supply (123); a reference resistor (122); an operational amplifier (121), the potential between the reference resistor and the sensing MOS transistor is close to that of the reference potential way, the output is applied to the gate of the sense MOS transistor. The sense current control circuit flows a current determined according to the resistance value of the reference resistor and the reference potential as a drain current of the sense MOS transistor.

Description

[0001] Cross-References to Associated Applications [0002] This application is based on the Japanese application number 2014-66596 for which it applied on March 27, 2014, and uses the description content here. technical field [0003] The present application relates to a drive device that performs on-off control of a power switching element and protection during abnormality. Background technique [0004] As for power switching elements constituting semiconductor power conversion devices such as inverters and converters, as a compromise between increasing surge voltage and switching loss during switching operations, active gates that dynamically control gate voltage or gate current are used. pole control (AGC). [0005] Also, as in Patent Document 1, a drive circuit is proposed that suppresses the gate voltage and suppresses the collector current when an excessive current flows through the power switching element, and protects the power switching element from damage. [00...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08H03K17/08
CPCH02M1/08H02M1/32H03K17/0828H03K17/168H03K17/30H03K17/6877H03K2217/0036H02M1/0009H02M1/0054Y02B70/10H02M1/088H03K17/567H03K17/687
Inventor 长濑拓生
Owner DENSO CORP