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Apparatus for cleaning reflective mask and method for cleaning reflective mask

一种清洗装置、反射型的技术，应用在清洁方法和用具、化学仪器和方法、图纹面的照相制版工艺等方向，能够解决反射型掩膜光学特性劣化、反射率降低等问题，达到抑制光学特性的劣化的效果

Active Publication Date: 2016-11-23
SHIBAURA MECHATRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Therefore, there is a problem that ruthenium oxide is formed on the exposed portion, resulting in a decrease in reflectivity, resulting in deterioration of optical characteristics as a reflective mask.

Method used

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  • Apparatus for cleaning reflective mask and method for cleaning reflective mask
  • Apparatus for cleaning reflective mask and method for cleaning reflective mask
  • Apparatus for cleaning reflective mask and method for cleaning reflective mask

Examples

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Embodiment Construction

[0025] Embodiments are illustrated below with reference to the drawings. In addition, the same code|symbol is attached|subjected to the same component in each drawing, and detailed description is abbreviate|omitted suitably.

[0026] The object W to be cleaned may be an exposed layer including a material that is easily oxidized.

[0027] The object W to be cleaned may be, for example, a reflective mask having a coating layer containing ruthenium, a substrate having a coating layer containing ruthenium (a substrate in the process of manufacturing a reflective mask), or the like.

[0028] figure 1 It is a schematic cross-sectional view illustrating a reflective mask 210 as an object W to be cleaned.

[0029] Such as figure 1 As shown, a reflection layer 202 , a cover layer 203 , and an absorption layer 204 are stacked in this order on one main surface of a substrate 201 .

[0030] In addition, a conductive layer 205 is formed on the other main surface of the substrate 201 . ...

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Abstract

Provided are: an apparatus for cleaning a reflective mask, which is capable of suppressing deterioration of the optical characteristics of a capping layer that is provided on a reflective mask and contains ruthenium; and a method for cleaning a reflective mask. An apparatus for cleaning a reflective mask according to one embodiment of the present invention is provided with: a first supply unit which supplies a first solution containing an organic solvent and / or a surfactant to a capping layer that is provided on a reflective mask and contains ruthenium; and a second supply unit which supplies a reducing solution and / or a solution containing no oxygen to the capping layer. An apparatus for cleaning a reflective mask according to another embodiment of the present invention is provided with: a third supply unit which supplies a plasma product produced from a reducing gas to a capping layer that is provided on a reflective mask and contains ruthenium; and a second supply unit which supplies a reducing solution and / or a solution containing no oxygen to the capping layer.

Description

technical field [0001] Embodiments of the present invention relate to a cleaning device for a reflective mask and a cleaning method for a reflective mask. Background technique [0002] A component having a layer containing a material that is easily oxidized such as ruthenium (Ru). [0003] For example, a reflective mask used in EUV lithography for replicating fine patterns using EUV (EUV: Extreme Ultra Violet) has a capping layer (also referred to as a barrier layer, etc.) containing ruthenium. [0004] In the manufacture of this reflective mask, a reflective layer, a cover layer, and an absorbing layer are sequentially formed on the main surface of a substrate, and dry etching is performed on the absorbing layer to form a pattern region having a desired pattern. Furthermore, a light-shielding region (also referred to as a light-shielding frame, etc.) surrounding the pattern region is formed by performing dry etching on the absorbing layer, the cover layer, and the reflecti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/82G03F1/24H01L21/027H01L21/304
CPCG03F1/24G03F1/82G03F7/70925G03F7/422G03F7/0045B08B7/0035
Inventor 松嶋大辅出村健介铃木将文中村聪
Owner SHIBAURA MECHATRONICS CORP
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