Modeling local temperature variations on an integrated circuit chip using thermal potential theory

Abstract

The present invention relates to modeling local temperature variations on integrated circuit chips using thermal potential theory. The temperature variation of devices on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled to account for insufficient heat removal from the backside of the chip. To perform this modeling, a test integrated circuit (IC) chip must be used to predetermine the ratio of imaginary heat to actual heat at various locations on the IC chip. During testing, a test device is selected at a specific location on the test IC chip to act as a heat source, while at least two other test devices at other locations on the test IC chip act as temperature sensors. Apply a bias voltage to the heat source and measure the temperature change at the heat source and sensor. These changes are the values ​​used to calculate the ratio of virtual heat to actual heat to be associated with this particular location.

Description

technical field [0001] Embodiments disclosed herein relate to integrated circuit (IC) chip design, and more particularly, to modeling the temperature at one location on an IC chip based on the heat generated at one or more other locations on the IC chip. Specific Embodiments of Varying Systems and Methods. Background technique [0002] More specifically, the performance of integrated circuit (IC) on-chip devices (eg, field effect transistors (FETs), bipolar transistors, resistors, capacitors, etc.) may vary with temperature. The temperature of the device can change due to the self heating effect (SHE). The self-heating effect refers to the heat generated by the device itself when it is in action. Those skilled in the art will recognize that there is a close relationship between the supply voltage applied to an active device and the temperature of that device. The temperature of the device may also change due to thermal coupling (that is, due to the proximity of the device...

AI Technical Summary

Problems solved by technology

However, modeling of local temperature changes due to thermal coupling generally involves calculations of thermal resistance along thermal paths, and such calculations can be quite complex, time-consuming and often inaccurate

This is especially true when the chip package contains an inefficient backside heat removal (e.g., by convection or radiation) of the IC die, so that the temperature distribution on the backside of the IC die changes, the thermal flow lines change, and thus the thermal resistance that needs to be calculated

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