Method for realizing enhanced HEMT through secondary epitaxy P-type III-group nitride and enhanced HEMT
A secondary epitaxy and enhancement technology, applied in the field of microelectronics technology, can solve the problems of small etching selection ratio, low 2DEG concentration, and difficulty in controlling the etching of P-type semiconductors, and achieve easy mass production and good repeatability , the effect of high current density
Inactive Publication Date: 2017-01-04
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF3 Cites 8 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The P-type capping layer technology does not produce the influence of ion etching on channel electrons, so it has a high saturation current. However, generally used P-type semiconductors (such as P-AlGaN, P-GaN, P-InGaN, etc.) are used During dry etching (such as Cl 2 Plasma etching), the barrier layer AlGaN has a small etching selectivity ratio to the P-type semiconductor, so it is difficult to control the complete etching of the P-type semiconductor, and the etching stops on the surface of the barrier layer AlGaN
And in order to ensure that the P-type capping layer completely depletes the channel 2DEG, the barrier layer in the heterostructure needs to be as thin as about 15nm. Usually, the barrier layer in the heterostructure is about 25nm, and the thinner barrier layer would result in a lower concentration of 2DEG in the channel
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0043] refer to figure 1 , for ordinary HEMT devices (take AlGaN / GaN devices as an example, hereinafter referred to as "device"), generally speaking, when zero bias voltage or no bias voltage is applied to the gate electrode 7, the source electrode 8 and the drain electrode 9 are both It is connected to the two-dimensional electron gas 6, so the source electrode 8 and the drain electrode 9 of the device are turned on, and the device is in the open state. Generally, this device is called a depletion HEMT device, and it can also be called a normally-on HEMT device. . During the turn-off process of the device, a certain negative bias voltage must be applied to the gate electrode, and the applied bias voltage Vth , to deplete the two-dimensional electrons under the gate. In the actual application process, there are problems of high power consumption and safety.
[0044] refer to figure 2 In the shown device, when zero bias voltage or no bias voltage is applied to the gate elect...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a method for realizing an enhanced HEMT through secondary epitaxy P-type III-group nitride and the enhanced HEMT. In one embodiment, the method comprises the following steps: providing a heterostructure mainly formed by III-group nitrides, and preparing a surface passivation layer, a source electrode and a drain electrode on the heterostructure, wherein the source electrode and the drain electrode form ohmic contact with the surface of the heterostructure, and are in electrical connection with a two-dimensional electron gas in the heterostructure; etching the surface passivation layer and a partial region of a barrier layer of the heterostructure right under a gate electrode to form a groove structure in the barrier layer; growing a P-type semiconductor on the surface of the barrier layer in the groove through the selective area epitaxy technology; and preparing the gate electrode on the surface of the P-type semiconductor between the source electrode and the drain electrode. The enhanced HEMT is realized effectively; and the method is simple in process, high in repeatability, low in cost and easy for large-scale production.
Description
technical field [0001] The present invention relates to an enhanced HEMT (High Electron Mobility Transistor) device and a manufacturing method thereof, in particular to a method for realizing a P-type groove structure enhanced HEMT by secondary epitaxy of a P-type Group III nitride semiconductor in a selective area and The corresponding enhanced HEMT device belongs to the field of microelectronic technology. Background technique [0002] HEMT devices are made by making full use of the two-dimensional electron gas formed by the heterojunction structure of semiconductors. Compared with the III-VI group (such as AlGaAs / GaAs HEMT), the III-nitride semiconductor can form a high concentration of dioxane on the heterostructure (such as AlGaN / GaN) due to the piezoelectric polarization and spontaneous polarization effects. Dimensional Electron Gas (2DEG). Therefore, in HEMT devices made of group III nitrides, the barrier layer generally does not need to be doped. Group III nitride...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L29/778H01L29/06H01L29/66
CPCH01L29/7787H01L29/0684H01L29/66462
Inventor于国浩张志利张宝顺蔡勇付凯孙世闯宋亮
OwnerSUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI