Non-volatile memory read and write control circuit

Abstract

The invention discloses a nonvolatile memory read-write control circuit. The nonvolatile memory read-write control circuit comprises a main control circuit, a replacement circuit and a memory interface control circuit. The replacement circuit is used for storing a replacement address mapping table and searching for an address corresponding to a write address output by the main control circuit according to the replacement address mapping table. The memory interface control circuit generates a corresponding storage unit write control signal to write a memory according to a write enable signal sent by the main control circuit, write parameters and a mapped storage unit address output by the replacement circuit, after the memory is written, a storage unit is automatically read, and read-out data is transmitted to the main control circuit. The invention further discloses a nonvolatile memory read-write control method. The overall service life of the nonvolatile memory can be prolonged.

Description

Technical field [0001] The present invention relates to the field of non-volatile memory, in particular to a non-volatile memory read-write control circuit. Background technique [0002] For smart card projects, non-volatile memory such as EEPROM is essential. The performance of non-volatile memory will deteriorate as the number of writes increases, and the degree of deterioration will be reflected in the time required for erasing and writing and the current required, which means that the memory cell will undergo such a process. Use normal current and time to write; then use a lot of current and a long time to write; finally, it cannot write successfully. [0003] EEPROM has a limitation on the maximum number of erasing and writing. When the maximum number of erasing and writing is exceeded, the corresponding EEPROM storage unit cannot work normally. If the chip continues to use the EEPROM storage unit at this time, the entire chip will not work properly. Summary of the inventio...

AI Technical Summary

Problems solved by technology

The performance of non-volatile memory will deteriorate as the number of writes increases, and the degree of deterioration will be reflected in the time required for erasing and writing and the current required, that is to say, the memory cell will go through such a process. Use the usual current and time to write; then use a large current and a long time to write; finally, you can’t write successfully

[0003] EEPROM has a limit on the maximum number of times of erasing and writing. When the maximum number of times of erasing and writing is exceeded, the corresponding EEPROM storage unit will not work normally.

At this time, if the chip continues to use the EEPROM storage unit, the entire chip will not work properly.

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