A preparation method of silicon wafer/graphene oxide/poly-4-vinylpyridine brush/polypyrrole-gold nanocomposite
A vinylpyridine and composite material technology, applied in the field of graphene-based composite materials, can solve problems such as limited and enhanced Raman signal capability, and achieve the effect of trace detection
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Embodiment 1
[0026] Step 1: Firstly, immerse the silicon wafer coated with silicon dioxide on the surface in a toluene solution containing 5% 3-aminopropyltriethoxysilane, and react ultrasonically for 2 hours to obtain an amino-modified silicon wafer. Drop the ethanol solution of 0.025 mg / mL graphene oxide (GO) on the silica gel stamp, transfer GO to the silicon wafer with amino groups by stamp imprint transfer method, and dry naturally to remove the ethanol, and then the GO-modified silicon wafer can be obtained .
[0027] figure 1 It is the Raman spectrum of silicon wafer / GO. From the figure, it can be seen that the D peak (1335cm -1 ) and G peak (1592cm -1 ). The G peak represents the ordered graphite-like structure, while the D peak represents the defect structure in graphene, thus proving that GO has been successfully modified onto the silicon wafer surface.
[0028] Step 2: Soak the silicon wafer / GO in a sealed tube containing 4-vinylpyridine monomer, and irradiate it with ultrav...
Embodiment 2
[0034] Step 1 and step 2 are the same as in Example 1.
[0035] Step 3:
[0036] Brush the silicon wafer / GO / P4VP in chloroauric acid (HAuCl 4 ) aqueous solution (1%wt) for 12 hours, then removed and washed with deionized water to remove unadsorbed HAuCl 4 . Subsequently, the adsorbed HAuCl 4 The silicon wafer / GO / P4VP brush was soaked in the pyrrole solution and reacted for 30 minutes to obtain the silicon wafer / graphene oxide / poly-4-vinylpyridine brush / polypyrrole-gold composite material (silicon wafer / GO / P4VP / PPy- Au composite).
[0037] image 3 (B) is the SEM image of the obtained silicon wafer / GO / P4VP / PPy-Au composite material. It can be seen from the figure that a flower-like gold nanostructure is obtained.
Embodiment 3
[0039] Step 1 and step 2 are the same as in Example 1.
[0040] Step 3: Brush the silicon wafer / GO / P4VP in chloroauric acid (HAuCl 4 ) aqueous solution (1%wt) for 12 hours, then removed and washed with deionized water to remove unadsorbed HAuCl 4 . Subsequently, the adsorbed HAuCl 4 The silicon wafer / GO / P4VP brush was soaked in the pyrrole solution and reacted for 60 minutes to obtain the silicon wafer / graphene oxide / poly-4-vinylpyridine brush / polypyrrole-gold composite material (silicon wafer / GO / P4VP / PPy- Au composite).
[0041] image 3 (C) is the SEM image of the obtained GO / P4VP / PPy-Au composite. It can be seen from the figure that a flower-like gold nanostructure is obtained.
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