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Semiconductor structure and method for improving NMOS bimodal effect

A semiconductor and active area technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as leakage, and achieve the effect of improving the double peak effect and suppressing field-on leakage.

Inactive Publication Date: 2017-03-15
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] NMOS devices prepared by LOCOS process or STI process often have leakage defects, and there is no corresponding method in the prior art to solve this defect

Method used

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  • Semiconductor structure and method for improving NMOS bimodal effect
  • Semiconductor structure and method for improving NMOS bimodal effect
  • Semiconductor structure and method for improving NMOS bimodal effect

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Embodiment Construction

[0039] The semiconductor structure for growing field oxygen of the present invention will be described in detail below with reference to specific embodiments and accompanying drawings.

[0040] In the existing method, after the active region is defined under the LOCOS (local oxidation isolation process) process, silicon dioxide is directly grown to form a field oxygen region, and then P well implantation is performed in the substrate, between the P well and the field oxygen region A fringe band resembling a "bird's beak" will form. Due to the "boron absorbing" effect of silicon dioxide and a certain blocking effect on the edge, the boron concentration of the P well under the edge band is lower than that of the P well in the middle of the active region. Subsequent testing of the NMOS channel current and gate voltage curve (ID_VG curve) found that, as figure 1 As shown, in the edge band region formed when the field oxygen is long at the edge of the active region, when measuring...

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Abstract

The invention relates to the technical field of semiconductor device fabrication and more particularly to a semiconductor structure and a method for improving an NMOS bimodal effect. In a process of NMOS preparation, after a LOCOS (local oxidation of silicon) process and / or a STI (shallow trench isolation) process define an active region, the edge boron concentration of the active region is compensated through the diagonal boron injection, thereby inhibiting the field open leakage caused by the LOCOS process and / or the STI process, improving the NMOS bimodal effect. Further, the method does not need an additional photomask and acorresponding process so as to achieve an economical and practical effect.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a semiconductor structure and a method for improving the double peak effect of NMOS. Background technique [0002] Existing NMOS (N-Metal-Oxide-Semiconductor, N-channel Metal-Oxide-Semiconductor) devices generally adopt Local Oxidation of Silicon (LOCOS for short) process or shallow trench isolation (Shallow Trench Isolation, STI for short). ) process defines the active area, and the threshold voltage of the NMOS device is adjusted by performing P-well implantation in the active area. [0003] The NMOS device manufactured by the LOCOS process or the STI process often has a leakage defect, and there is no corresponding method to solve this defect in the prior art. Contents of the invention [0004] In view of the above technical problems, the present invention provides an NMOS structure and a method for improving the double peak effect of NMOS. After...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L21/265H01L21/02
CPCH01L29/772H01L21/02664H01L21/26506H01L29/0603H01L29/0607H01L29/66477
Inventor 何明江胡孙宁马先东刘中旺
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD