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Manufacturing method of NAND flash memory

A manufacturing method and technology of flash memory, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., to achieve the effects of supplementing losses, increasing doping concentration, and improving performance

Pending Publication Date: 2020-07-14
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the existing NAND flash memory manufacturing process, the shallow trench isolation (STI) process is generally used to define the active area (AA), especially for the preparation of high-voltage NMOS devices in NAND flash memory, due to the influence of the shallow trench isolation structure, the substrate Boron (B) doped in the P well (PWell) region is easy to precipitate at the edge of the active region, and the doping concentration of P-type ions at the edge of the active region is lower than that of the boron ion doping concentration in the middle region of the active region , so that the final NMOS device has a double-peak effect

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  • Manufacturing method of NAND flash memory
  • Manufacturing method of NAND flash memory
  • Manufacturing method of NAND flash memory

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Embodiment Construction

[0034] It can be seen from the background art that in the existing NAND flash manufacturing process, due to the influence of the shallow trench isolation structure, the P-type ion doping concentration of the P well in the substrate 100 at the edge corner of the active region is less than P-type ion doping concentration in the middle region of the active region. The P well will adjust the threshold voltage of the finally formed NAND flash memory (such as HVNMOS) device. Since the P-type ion doping concentration at the edge vertex position of the active region is small, the edge vertex position of the active region The threshold voltage at becomes smaller, that is, a parasitic NMOS device with a smaller threshold voltage will be formed at the corner of the edge of the active region. The decrease of the threshold voltage will increase the leakage at the edge corner of the active region, and due to the existence of the parasitic NMOS device, the parasitic NMOS device will be turne...

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Abstract

The invention provides a manufacturing method of an NAND flash memory. According to the manufacturing method, a gate material layer is formed on a substrate; the gate material layer and a substrate are sequentially etched, so that a gate and an isolation trench are formed; and the isolation trench is filled with an isolation material, so that an isolation structure can be formed; and p-type ion implantation is carried out on the substrate. After the isolation structure is formed, through P-type ion implantation, the doping concentration of P-type ions at the vertex angle position of the edge of an active region is improved, the loss of the P-type ions in a trench isolation process is supplemented, a double-peak effect is improved, and the performance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a NAND flash memory. Background technique [0002] NAND flash memory (NAND flash) is a kind of non-volatile flash memory, the main function is to store data, with high storage cell density, fast writing and erasing speed, and the storage cell size of NAND flash memory is almost the same as that of NOR flash memory Half the size can provide higher capacity within a given mold size, so it is widely used in various fields such as data centers, personal computers, mobile phones, smart terminals, consumer electronics, etc., and still shows a situation of growing demand. [0003] In the existing NAND flash memory manufacturing process, the shallow trench isolation (STI) process is generally used to define the active area (AA), especially for the preparation of high-voltage NMOS devices in NAND flash memory, due to the influence of the shallow trench is...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L27/11517H01L27/11563H01L21/265H10B69/00H10B41/00H10B43/00
CPCH01L21/26513H10B41/00H10B43/00H10B69/00
Inventor 刘涛巨晓华王奇伟
Owner SHANGHAI HUALI MICROELECTRONICS CORP