A method of manufacturing a semiconductor device

Abstract

The invention discloses a semiconductor device production method. The method includes: providing a semiconductor substrate; forming an oxide underlayer and a nitride layer on the semiconductor substrate in sequence; patterning the oxide underlayer and the nitride layer so as to form an opening exposing the semiconductor substrate; etching the semiconductor substrate according to the opening so as to form a shallow trench; forming a liner layer on the bottom and the side wall of the shallow trench; adopting a pull-back process to treat the nitride layer so as to expose part of the oxide underlayer near the top of the shallow trench; performing oxidation to expose the oxide underlayer. In conclusion, according to the production process, the form of the shallow trench in the semiconductor substrate can be optimized, formed STI (shallow trench isolation) corners are rounder and smoother, double hump caused by the fact that transistors of the STI corner areas are opened earlier is improved, performance of the semiconductor device is improved, the size of the semiconductor device in the width direction is reduced favorably, and the shallow trench is filled subsequently favorably.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a semiconductor device. Background technique [0002] As the microelectronics process enters the deep submicron stage, in order to realize high-density, high-performance large-scale integrated circuits, the isolation process between semiconductor devices becomes more and more important. The prior art generally adopts shallow trench isolation technology (STI, Shallow Trench Isolation) to realize the isolation of active devices, such as in complementary metal oxide semiconductor (CMOS) devices, NMOS (N-type metal oxide semiconductor) transistors and PMOS ( The isolation layers between the P-type metal oxide semiconductor) transistors are all formed by shallow trench isolation technology. [0003] Shallow trench isolation technology has gradually replaced other isolation methods used in traditional semiconductor device manufacturing, such as local ...

AI Technical Summary

Problems solved by technology

According to the existing technology, the rounding process of the corners of the shallow trench isolation structure has limitations, and at the same time, it can no longer meet the growing technical requirements

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