Solid state disk reading error detecting device and method for detecting reasons for reading errors incapable of being corrected

Abstract

The invention discloses a solid state disk reading error detecting device and a method for detecting reasons for reading errors incapable of being corrected. Different treatment strategies are selected according to different reasons for the reading errors incapable of being corrected, therefore, it is guaranteed that the service life of Flash Page is longest, and the service life of SSD is prolonged.

Description

technical field [0001] The invention relates to the detection of SSD solid-state hard disks, in particular to a solid-state hard disk, a read error detection device and a detection method for the cause of read uncorrectable errors. Background technique [0002] First, two basic characteristics related to NAND Flash read data errors are introduced: [0003] 1) Data Retention: Data retention, the data on NAND Flash is determined by the number of electrons stored in the floating gate of each storage unit, but the electrons in the floating gate will escape; the longer the time, the higher the temperature , The greater the erasing times of the block, the more electrons escape from the floating gate, and the weaker the data retention ability of NAND Flash, which will eventually lead to data errors; [0004] 2) Read Disturb: Read Disturb, due to the physical structure of the NAND Flash Block, when reading a FlashPage in the Block, it is necessary to apply a forward conduction volt...

AI Technical Summary

Problems solved by technology

[0003] 1) Data Retention: Data retention, the data on NAND Flash is determined by the number of electrons stored in the floating gate of each storage unit, but the electrons in the floating gate will escape; the longer the time, the higher the temperature , The greater the erasing times of the block, the more electrons escape from the floating gate, and the weaker the data retention ability of NAND Flash, which will eventually lead to data errors;

[0004] 2) Read Disturb: Read Disturb, due to the physical structure of the NAND Flash Block, when reading a FlashPage in the Block, it is necessary to apply a forward conduction voltage to other Flash Pages; although the conduction voltage is lower than the programming voltage, it will still A small amount of electrons enter the floating gate, resulting in an increase in the number of electrons in these unread Flash Pages; the more times are read, the more electrons in the unread Flash Page increase, which eventually leads to data errors

[0012] Data Retention: Data retention, one of the basic characteristics of NAND Flash, the escape of electrons stored in the floating gate of the NAND Flash storage unit leads to the reduction of stored electrons in it, the longer the time, the higher the temperature, the more serious the particle wear, the faster the electron escapes, The weaker the data retention ability of NAND Flash, it will eventually lead to errors in Flash Page storage data;

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