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Polymer semiconductor carbon nitride nanorod catalyst and preparation method thereof

A semiconductor and nanorod technology, which is applied in the polymer semiconductor carbon nitride nanorod catalyst and its preparation, and in the field of polymer synthesis, can solve the problems of serious recombination of photogenerated carriers, poor mass transfer, large particle size, etc., and achieve Optimized shape, increased surface area, and easy recycling

Inactive Publication Date: 2019-10-25
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But the g-C prepared by the above hard template 3 N 4 All have a common disadvantage that the particle size is large, the recombination of photogenerated carriers is serious, and the mass transfer is poor, which limits the g-C 3 N 4 Large-scale industrial production and application of

Method used

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  • Polymer semiconductor carbon nitride nanorod catalyst and preparation method thereof
  • Polymer semiconductor carbon nitride nanorod catalyst and preparation method thereof
  • Polymer semiconductor carbon nitride nanorod catalyst and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0038] Step 1: Mix 0.875g KCl and 0.275g triblock copolymer surfactant polyoxyethylene-polyoxypropylene-polyoxyethylene EO 20 -PO 70 -EO 20 (P123) was dissolved in 120mL of 2M hydrochloric acid solution, stirred rapidly to form a uniform and transparent solution, added 3.15mmol organosilane precursor 1,4-bis(triethoxysilyl)benzene and continued to stir vigorously, reducing the stirring rate Stirring was continued at 30°C for 24h. Add the milky white turbid liquid obtained above into a 100mL polytetrafluoroethylene liner, place it in a thermostat at 70°C, and let it stand for 30h. Organic silicon nanotubes are obtained after extraction, filtration and drying. Synthesis process see figure 1 .

[0039] Step 2: Combine 1g B-SNT and 1g CH 2 N 2 Dissolve in 10mL ethanol solution, sonicate for 30min and then stir slowly for 12h, evaporate the ethanol solvent, and obtain B-SNT / CH after drying 2 N 2 Complex.

[0040] Step 3: Put the composite prepared in step 2 into a muffle ...

Embodiment 2

[0044] Step 1: 1.75g ​​KCl and 0.55g triblock copolymer surfactant polyoxyethylene-polyoxypropylene-polyoxyethylene EO 20 -PO 70 -EO 20 (P123) was dissolved in 120mL of 1.8M hydrochloric acid solution, stirred rapidly to form a uniform transparent solution, added 2.8mmol organosilane precursor 1,4-bis(triethoxysilyl)benzene and continued to stir vigorously, reduce the stirring Stirring was continued at 35 °C for 18 h. Add the milky white turbid liquid obtained above into a 100mL polytetrafluoroethylene liner, place it in a thermostat at 90°C, and let it stand for 25 hours. Organic silicon nanotubes are obtained after extraction, filtration and drying. Synthesis process see figure 1 .

[0045] Step 2: Combine 1g B-SNT and 5g CH 2 N 2 Dissolve in 60mL ethanol solution, sonicate for 120min and then stir slowly for 24h, evaporate the ethanol solvent, and obtain B-SNT / CH after drying 2 N 2 Complex.

[0046] Step 3: Put the composite prepared in step 2 into a muffle furnac...

Embodiment 3

[0050] Step 1: Mix 3.5g KCl and 1.1g triblock copolymer surfactant polyoxyethylene-polyoxypropylene-polyoxyethylene EO 20 -PO 70 -EO 20 (P123) was dissolved in 120mL 2.2M hydrochloric acid solution, stirred rapidly to form a uniform transparent solution, added 2.45mmol organosilane precursor 1,4-bis(triethoxysilyl)benzene and continued to stir vigorously, reduce the stirring Stirring was continued at 40 °C for 12 h. Add the milky white turbid liquid obtained above into a 100mL polytetrafluoroethylene liner, place it in a thermostat at 110°C, and let it stand for 20 hours. Organic silicon nanotubes are obtained after extraction, filtration and drying. Synthesis process see figure 1 .

[0051] Step 2: Combine 1g B-SNT and 3g CH 2 N 2 Dissolved in 35mL ethanol solution, stirred slowly for 18h after ultrasonication for 75min, evaporated the ethanol solvent, and obtained B-SNT / CH after drying 2 N 2 Complex.

[0052] Step 3: Put the composite prepared in step 2 in a muffle...

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Abstract

The invention relates to a polymer semiconductor carbon nitride nanorod catalyst. A polymer semiconductor CN nanorod photocatalyst is characterized by being prepared by taking an organic silicon nanotube as a hard template, impregnating a precursor in the hard template, carrying out polymerization and removing the template, the diameter of the semiconductor CN nanorod is about 15nm, and the length of the semiconductor CN nanorod is about 80nm. The CN nanorod photocatalyst provided by the invention has the advantages that the surface area is effectively increased while the size is reduced, the morphology is optimized, and transfer and separation of a charge carrier are effectively promoted. Experiments also study influence of different ratios of the hard template to the precursor and roasting temperatures on morphology and carbon content of a g-C3N4 nanorod, and the experiments show that the CN nanorod photocatalyst with a small diameter and a short length has good photocatalytic performance, so that the CN nanorod photocatalyst has relatively great application prospects.

Description

technical field [0001] The invention belongs to the field of catalysts and relates to polymer synthesis, in particular to a polymer semiconductor carbon nitride nanorod catalyst and a preparation method thereof. Background technique [0002] Polymer semiconductor carbon nitride (g-C 3 N 4 ) as a metal-free visible-light photocatalyst has great potential applications in solar energy conversion and environmental protection. Due to its unique semiconductor structure and excellent chemical stability, it is used for photocatalytic splitting of water or CO 2 Reduction, can directly convert and store solar energy in energy-rich molecules, such as hydrogen and hydrocarbon molecules, are also widely used in fuel cells, pollutant degradation, therefore, g-C 3 N 4 The research on preparation and performance has aroused extensive attention of researchers at home and abroad. Design and preparation of g-C with various structures and morphologies from millimeter scale to nanoscale by ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24
CPCB01J27/24B01J35/004B01J35/023B01J35/026
Inventor 刘晓李梅张胜波王华韩金玉
Owner TIANJIN UNIV