Test method for photon transfer curve and conversion gain of complementary metal oxide semiconductors after irradiation

Abstract

The invention relates to a testing method of a post-irradiation complementary metal oxide semiconductor photon transfer curve and a conversion gain. A referred device of the method is composed of an electrostatic test platform, an integrating sphere source, a three-dimensional sample adjustment table, a sample test plate, a complementary metal oxide semiconductor sample, a direct current power supply and a computer. The method comprises the steps of by adjusting an irradiance of the integrating sphere source and an integral time of test software, making a product of the irradiance and the integral time be saturated output of a complementary metal oxide semiconductor, and calculating an average gray value of a post-irradiation dark field and a temporal variance corresponding to the gray value; on the condition of a bright field, calculating an average gray value of a post-irradiation bright field and a temporal variance corresponding to the gray value; using post-irradiation bright field data to subtract post-irradiation dark field data with the identical integral time with the post-irradiation bright field data to obtain a post-irradiation difference value of the average gray values and difference value of the gray value temporal variances, drawing the post-irradiation correct photon transfer curve with the post-irradiation difference value of the average gray values and difference value of the gray value temporal variances as an x-coordinate and a y-coordinate respectively, wherein a fitting slope of a linear part of the curve is the post-irradiation correct conversion gain.

Description

technical field [0001] The invention belongs to the technical field of performance parameter detection of photoelectric imaging devices, and relates to a method for testing photon transfer curves and conversion gains of complementary metal oxide semiconductors after irradiation. Background technique [0002] Photoelectric imaging devices are a general term for information devices that use the photoelectric effect to convert light radiation images into observable, recording, transmitting, storing and processing information. Photoelectric imaging devices are widely used in various space optical satellites and payloads. Because they can obtain images in real time, they are indispensable core devices in space photoelectric systems such as ground remote sensing reconnaissance, target monitoring, and star sensors. Compared with charge-coupled devices, complementary metal oxide semiconductors have obvious advantages such as monolithic integration, high reliability, single voltage, ...

AI Technical Summary

Problems solved by technology

[0005] It is precisely because of the importance of the two parameters of photon transfer curve and conversion gain, and using the standard EMVA 1288 to test the performance parameters of CMOS after irradiation, its scope of application is very limited, and some parameters cannot be solved

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