A kind of silicon germanium low temperature epitaxy method

Abstract

The invention discloses a silicon-germanium low temperature epitaxial method comprising the steps that step 1: RCA cleaning is performed on a silicon chip, then oxide layer removing processing is performed, then the silicon chip is cleaned by deionized water after processing and blown and dried through nitrogen so as to obtain a liner; step 2: the liner of the step 1 is rapidly arranged in a chamber, the chamber is vacuum-pumped into an epitaxial growth system of which the degree of vacuum is 10-5 Torr, and the substrate is heated to 250-450 DEG C; and step 3: high temperature hot wire catalysis is performed on hydrogen and GeH4 and then B2H6 is added to be piped into the chamber to perform p-Ge epitaxial growth tougher. The p-Ge epitaxial layer is obtained through processing by adding B2H6, and time consumption of the period is relatively short so that the production and manufacturing efficiency can be enhanced.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to a silicon germanium low-temperature epitaxy method. Background technique [0002] The epitaxial process refers to growing a layer of material with the same lattice arrangement as the substrate on the substrate. The epitaxial layer can be a homoepitaxial layer or a heteroepitaxial layer. Silicon germanium (SiGe) epitaxy is a semiconductor compound formed by introducing germanium into silicon and combining it through covalent bonding. The introduction of Ge into Si has many important meanings, the most important of which is because Ge has a larger lattice constant than Si. The compressive strain in the SiGe crystal produces additional bandgap shrinkage, and the introduction of Ge induces an energy shift, which is beneficial for use in bipolar transistor designs. [0003] The invention patent application with the publication number CN101724896A discloses a method for non-sele...

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Problems solved by technology

[0004] However, in the silicon-germanium epitaxy method described above, the substrate needs to be sequentially fed with a gaseous silicon source for chemical vapor deposition, then fed with a gaseous silicon source and a gaseous germanium source for chemical vapor deposition, and then fed with a gaseous silicon source for chemical vapor deposition again, and finally processed to obtain Silicon germanium epitaxial layer, the period is relatively long, and the production efficiency is low

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