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Integrated circuit with laser fuse and method of forming same

A technology of integrated circuits and laser melting, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as fractures and cracks

Active Publication Date: 2021-04-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a structure with a laser fuse to solve the problem that the interlayer dielectric layer under the laser fuse is cracked or even broken during the laser trimming process

Method used

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  • Integrated circuit with laser fuse and method of forming same
  • Integrated circuit with laser fuse and method of forming same
  • Integrated circuit with laser fuse and method of forming same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] figure 2 It is a schematic structural diagram of an integrated circuit with a laser fuse in Embodiment 1 of the present invention, image 3 It is the layout of the laser fuse in the integrated circuit with the laser fuse in Embodiment 1 of the present invention, combined with figure 2 and image 3 As shown, the integrated circuit with laser fuse includes: a substrate 110 , an interlayer dielectric layer 120 , a buffer layer 150 and a laser fuse 130 . Wherein, the interlayer dielectric layer 120 is formed on the substrate 110 , the buffer layer 150 is located on the interlayer dielectric layer 120 , and the laser fuse 130 is formed on the buffer layer 150 .

[0073] In the above-mentioned integrated circuit, there is a buffer layer 150 between the laser fuse 130 and the interlayer dielectric layer 120 . That is, the mechanical stress and thermal stress imposed on the interlayer dielectric layer 120 by the laser fuse 130 are relieved by the buffer layer 150, so as to...

Embodiment 2

[0084] Figure 4 It is a schematic structural diagram of an integrated circuit with a laser fuse according to Embodiment 2 of the present invention, such as Figure 4 As shown, the difference from Embodiment 1 is that the protection layer in this embodiment includes a passivation layer 140, and the passivation layer 140 is formed on the interlayer dielectric layer 120 and covers the laser fuse 130. That is, a passivation layer 140 is formed directly above the laser fuse 130 to protect the circuit below it.

[0085] Similar to Embodiment 1, in order to ensure the fusing efficiency of the laser fuse 130 and protect the circuit below the passivation layer 140, the passivation layer of the partial area above the laser fuse 130 (irradiated area of ​​the laser beam) The thickness of the layer 140 is preferably less than Wherein, when the thickness of the passivation layer 140 is relatively thick, a groove 140a above the laser fuse 130 may be formed in the passivation layer 140, ...

Embodiment 3

[0087]Based on the above-mentioned integrated circuit with laser fuse, the present invention also provides a method for forming the integrated circuit, comprising: forming a conductive layer on the substrate, the interlayer dielectric layer formed on the substrate having the and forming a plurality of conductive plugs in the interlayer dielectric layer, the conductive plugs are respectively connected to the conductive layer and the laser fuse.

[0088] Figure 5 It is a schematic flow chart of forming an integrated circuit with a laser fuse in Embodiment 3 of the present invention, Figure 6a ~ Figure 6d It is a schematic diagram of the steps of forming an integrated circuit with a laser fuse in Embodiment 3 of the present invention. Combine below Figure 5 and Figure 6a~6d , taking the formation of the integrated circuit with laser fuses described in Embodiment 1 as an example to describe in detail.

[0089] First, execute step S00, for details, refer to Figure 6a As s...

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Abstract

The invention provides an integrated circuit with a laser fuse and a forming method thereof, the structure comprising: a substrate; an interlayer dielectric layer formed on the substrate; a buffer layer located on the interlayer dielectric layer; And, a laser fuse formed on the buffer layer. That is, since a buffer layer is arranged between the laser fuse and the interlayer dielectric layer, the mechanical stress and thermal stress generated by the laser fuse are prevented from acting directly on the interlayer dielectric during the laser trimming process. layer, thereby effectively improving the problem of cracks in the interlayer dielectric layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an integrated circuit with a laser fuse and a forming method thereof. Background technique [0002] A fuse is usually provided in a semiconductor integrated circuit, and the purpose of modifying the functions or parameters of the integrated circuit can be achieved by blowing the fuse. According to the fusing method of the fuse, the fuse can be divided into an electrical fuse (Electrical Fuse) and a laser fuse (Laser fuse). Laser fuse blown. [0003] figure 1 It is a structural schematic diagram of an existing integrated circuit with a laser fuse, such as figure 1 As shown, the integrated circuit with a laser fuse includes: a substrate 11; an interlayer dielectric layer 12 located on the substrate 11; a laser fuse 13 formed on the interlayer dielectric layer 12; and, Covering the protective layer 14 of the interlayer dielectric layer 12 and the laser fuse 1...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/525H01L23/532
CPCH01L21/76829H01L23/5258H01L23/5329
Inventor 吴亚贞
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP