Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Realization method for improving FLASH parameter storage frequency

A technology of implementation method and parameters, applied in the field of electronics, can solve problems such as damage to FLASH chips, and achieve the effect of prolonging the service life and improving the running speed.

Active Publication Date: 2017-07-18
XUJI GRP +3
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for improving the number of FLASH parameters saved, in order to solve the problem that the existing FLASH is damaged due to repeated erasing and writing because it is not fully stored

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Realization method for improving FLASH parameter storage frequency
  • Realization method for improving FLASH parameter storage frequency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0043] The present invention proposes a kind of realization method that improves FLASH parameter preservation number of times, comprises the following steps:

[0044] (1) Divide at least 2 virtual partitions in the FLASH storage area;

[0045] (2) By checking the value in the register of the start address of the FLASH storage area, determine whether the virtual partition has been written; if the value is 0xFFFF, the virtual partition has not been written, otherwise it has been written;

[0046] (3) If the virtual partition has not been written, write the value 0xFFFF into the register whose address is the starting address of the FLASH storage area;

[0047] (4) If the virtual partition has been written, judge whether the virtual partition has been written; if all the virtual partitions have been written, erase the entire FLASH storage area at one time,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a realization method for improving FLASH parameter storage frequency. The method comprises the following steps of: automatically dividing a plurality of virtual subareas in a FLASH storage area according to length sizes of parameters; each time, sequentially storing the parameters in a virtual subarea connected with the virtual subarea for the last storage until all the virtual subareas are used; erasing the whole FLASH storage area for one time; and sequentially re-storing the parameters to the virtual subareas from first virtual subarea. According to the realization method, the problem that the FLASH chips are damaged due to frequent erasing as erasing is still carried out when the FLASH chips are not full is solved; the parameter storage frequency is equal to the number of the virtual subareas multiplied by a FLASH erasable frequency, so that the service life of the FLASH chips is prolonged; and meanwhile, indexes are established in a zero virtual subarea, so that to-be-stored register start addresses of the current parameters can be rapidly searched through index addresses.

Description

technical field [0001] The invention belongs to the field of electronic technology, and in particular relates to a realization method for increasing the storage times of FLASH parameters. Background technique [0002] FLASH memory (programmable read-only memory, hereinafter referred to as FLASH) is a new type of semiconductor memory introduced by Intel in 1988. It has non-volatile storage characteristics, referred to as flash memory. This type of read-only memory has high integration and fast reading speed. , a single power supply, and many reprogramming times. As a non-volatile data storage device, FLASH memory is widely used in embedded systems. The FLASH in the single-chip microcomputer can be programmed online, and can also store data when the program is running. [0003] Since FLASH can only change its bit from 1 to 0 when writing, each bit must be changed to 1 before writing, that is, to be erased; and FLASH erasing is limited by the minimum area, that is, it needs to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06G06F12/02
CPCG06F3/0616G06F3/0638G06F3/0644G06F3/0652G06F3/0665G06F12/0246G06F2212/1036
Inventor 李红刚王旭昊王海明代兴华刘德林李朝锋赵瑞杰
Owner XUJI GRP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com