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A Realization Method of Improving the Number of Flash Parameters Saved

An implementation method and parameter technology, which is applied in the electronic field, can solve problems such as FLASH chip damage, and achieve the effect of prolonging the service life and improving the operating speed

Active Publication Date: 2020-04-17
XUJI GRP +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for improving the number of FLASH parameters saved, in order to solve the problem that the existing FLASH is damaged due to repeated erasing and writing because it is not fully stored

Method used

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  • A Realization Method of Improving the Number of Flash Parameters Saved
  • A Realization Method of Improving the Number of Flash Parameters Saved

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Embodiment Construction

[0042] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0043] The present invention proposes a kind of realization method that improves FLASH parameter preservation number of times, comprises the following steps:

[0044] (1) Divide at least 2 virtual partitions in the FLASH storage area;

[0045] (2) By checking the value in the register of the start address of the FLASH storage area, determine whether the virtual partition has been written; if the value is 0xFFFF, the virtual partition has not been written, otherwise it has been written;

[0046] (3) If the virtual partition has not been written, write the value 0xFFFF into the register whose address is the starting address of the FLASH storage area;

[0047] (4) If the virtual partition has been written, judge whether the virtual partition has been written; if all the virtual partitions have been written, erase the entire FLASH storage area at one time,...

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Abstract

The invention relates to a realization method for improving FLASH parameter storage frequency. The method comprises the following steps of: automatically dividing a plurality of virtual subareas in a FLASH storage area according to length sizes of parameters; each time, sequentially storing the parameters in a virtual subarea connected with the virtual subarea for the last storage until all the virtual subareas are used; erasing the whole FLASH storage area for one time; and sequentially re-storing the parameters to the virtual subareas from first virtual subarea. According to the realization method, the problem that the FLASH chips are damaged due to frequent erasing as erasing is still carried out when the FLASH chips are not full is solved; the parameter storage frequency is equal to the number of the virtual subareas multiplied by a FLASH erasable frequency, so that the service life of the FLASH chips is prolonged; and meanwhile, indexes are established in a zero virtual subarea, so that to-be-stored register start addresses of the current parameters can be rapidly searched through index addresses.

Description

technical field [0001] The invention belongs to the field of electronic technology, and in particular relates to a realization method for increasing the storage times of FLASH parameters. Background technique [0002] FLASH memory (programmable read-only memory, hereinafter referred to as FLASH) is a new type of semiconductor memory introduced by Intel in 1988. It has non-volatile storage characteristics, referred to as flash memory. This type of read-only memory has high integration and fast reading speed. , a single power supply, and many reprogramming times. As a non-volatile data storage device, FLASH memory is widely used in embedded systems. The FLASH in the single-chip microcomputer can be programmed online, and can also store data when the program is running. [0003] Since FLASH can only change its bit from 1 to 0 when writing, each bit must be changed to 1 before writing, that is, to be erased; and FLASH erasing is limited by the minimum area, that is, it needs to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F12/02
CPCG06F3/0616G06F3/0638G06F3/0644G06F3/0652G06F3/0665G06F12/0246G06F2212/1036
Inventor 李红刚王旭昊王海明代兴华刘德林李朝锋赵瑞杰
Owner XUJI GRP
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