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Storage unit, memory and data writing method

A storage unit, data writing technology, applied in the field of memory, can solve problems such as slow memory writing speed

Active Publication Date: 2021-04-13
CETHIK GRP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The main purpose of this application is to provide a storage unit, memory and data writing method, to solve the problem of slow writing speed of memory in the prior art

Method used

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  • Storage unit, memory and data writing method
  • Storage unit, memory and data writing method
  • Storage unit, memory and data writing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] like Figure 9 As shown, the storage unit includes a spin-orbit moment providing structure 10 and two storage structures 20, which are respectively a first storage structure and a second storage structure. The spin-orbit moment providing structure 10 includes a first spin-orbit moment providing line 11 With the second spin-orbit moment supply line 12, the structures of the two storage structures 20 are the same, such as Figure 10 As shown, it includes a free layer 21, a tunnel layer 22, and a pinned layer 23 from bottom to top, wherein the free layer 21 of the first storage structure is arranged in contact with the first spin-orbit moment supply line 11, and the free layer of the second storage structure 21 is arranged in contact with the second spin-orbit moment supply line 12 . like Figure 10 As shown, the magnetization directions of the free layer 21 and the pinned layer 23 in each storage structure 20 are both perpendicular to the thickness of the storage struct...

Embodiment 2

[0090] The spin-orbit moment providing structure 10 is the same as that in Embodiment 1, and the two storage structures 20 are respectively the first storage structure and the second storage structure. The structures of the two storage structures 20 are the same, as Figure 4 As shown, it includes a free layer 21, a tunnel layer 22, and a pinned layer 23 from bottom to top, wherein the free layer 21 of the first storage structure is arranged in contact with the first spin-orbit moment supply line 11, and the free layer of the second storage structure 21 is arranged in contact with the second spin-orbit moment supply line 12 . like Figure 4 As shown, the magnetization directions of the free layer 21 and the pinned layer 23 in each storage structure 20 are perpendicular to the thickness of the storage structure 20 , and are parallel or antiparallel to the write current direction of the spin-orbit moment providing structure 10 .

[0091] Each layer in each storage structure is ...

Embodiment 3

[0095] The difference with embodiment 2 is that, as Figure 5 As shown, the storage structure further includes a magnetization layer 24 , and the magnetization layer is used to provide a magnetic field parallel to the thickness direction of the storage structure 20 .

[0096] The bias magnetic field provided by the magnetization layer causes the magnetization direction of the free layer to deviate from the plane of the memory cell, ie provides symmetry breaking. The torque of the free layer magnetic moment subjected to the equivalent field includes a horizontal component, which can ensure a one-to-one correspondence between the final magnetization direction of the free layer and the direction of the write current.

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Abstract

The application provides a storage unit, a memory and a data writing method. The storage unit includes: a spin-orbit moment supply structure, including two spin-orbit moment supply lines, which are respectively the first spin-orbit moment supply line and the second spin-orbit moment supply line, and the first spin-orbit moment supply line The spin polarization direction of the spin current generated by the write current in the same direction as the second spin-orbit moment supply line is different; the two storage structures are respectively the first storage structure and the second storage structure, and the two storage structures The structures are arranged at intervals, the first storage structure is arranged on the surface of the first spin-orbit moment supply line, the second storage structure is arranged on the surface of the second spin-orbit moment supply line, and each storage structure includes a spin-orbit moment Provides a free layer for line contact settings. The write speed of this memory cell is relatively fast.

Description

technical field [0001] The present application relates to the field of memory, and in particular, to a storage unit, a memory, and a data writing method. Background technique [0002] MTJ (magnetic tunnel junction) is a device based on the magnetic tunnel magnetoresistance (TMR) effect, generally including two magnetic layers and a dielectric layer between the magnetic layers. The magnetization orientation of the first magnetic layer is fixed (fixed layer), while the magnetization orientation of the second magnetic layer can be changed by a magnetic field or current (free layer), so that the two magnetic layers are in a parallel or antiparallel state, corresponding to a high resistance state (corresponding resistance R ap , logic state is 0) and low resistance state (corresponding to resistance R p , logic state is 1), can be used to store information. [0003] Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM for short) uses current to change the state of MTJ,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1675
Inventor 何世坤
Owner CETHIK GRP
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