Method for forming TiON film
A film-forming method and film-forming technology, applied in gaseous chemical plating, coatings, electrical components, etc., can solve the problems of inability to obtain step coverage, inability to add oxygen, insufficient film controllability, etc., and achieve suppression of smoothness. Deterioration, good smoothness, effect of reducing leakage current
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no. 1 approach ＞
[0102] figure 1 It is a schematic cross-sectional view showing an example of a film forming apparatus for carrying out the method for forming a TiON film according to the first embodiment of the present invention.
[0103] The film forming apparatus 100 has a substantially cylindrical chamber 1 . A susceptor 2 made of AlN is disposed inside the chamber 1 as a table for horizontally supporting a wafer W as a substrate to be processed, and is formed by a cylinder disposed at the lower central part of the susceptor 2. Shaped supporting member 3 supports the state configuration. The outer peripheral portion of the susceptor 2 is provided with a guide ring 4 for guiding the wafer W. As shown in FIG. In addition, a heater 5 made of a high-melting-point metal such as molybdenum is embedded in the susceptor 2 , and the heater 5 heats the wafer W serving as a substrate to be processed to a predetermined temperature by supplying power from a heater power supply 6 .
[0104] On the to...
no. 2 approach ＞
[0144] Next, a second embodiment of the present invention will be described. In this embodiment, use figure 1 The film forming apparatus 100 of the present invention forms a TiON film by a method in which nitriding is strengthened compared to the first embodiment.
[0145] Hereinafter, an example of a method for forming a TiON film according to the present embodiment will be described.
[0146] First, after the precoating process is performed in the same manner as in the first embodiment, the gate valve 43 is opened, and the wafer W is loaded into the chamber 1 through the loading and unloading port 42 from the wafer transfer chamber by a transfer device (both not shown), and placed therein. on base 2. Thereafter, the wafer W is heated to a predetermined temperature preferably in the range of 300° C. to 500° C. by the heater 5 , and N is supplied into the chamber 1 . 2 gas to perform preheating of the wafer W. When the temperature of the wafer becomes almost stable, the fo...
no. 3 approach ＞
[0170] Next, a third embodiment of the present invention will be described.
[0171] In this embodiment, use figure 1 The film forming apparatus 100 of the first embodiment is based on the premise of figure 2 After forming the TiON film, the surface of the film is treated with argon ions.
[0172] Figure 12 It is a sectional view showing an example of an apparatus for performing argon ion treatment.
[0173] Here, an example in which an ICP (Inductively Coupled Plasma, Inductively Coupled Plasma) type plasma sputtering apparatus is used as an argon ion processing apparatus is shown.
[0174] Such as Figure 12 As shown, the argon ion processing device 200 has a grounded chamber 201 made of metal such as aluminum, and an exhaust port 202 and a gas inlet 203 are provided at the bottom of the chamber 201 . The exhaust port 202 is connected to an exhaust pipe 204, and the exhaust pipe 204 is connected to a throttle valve for pressure adjustment and an exhaust member 205 inc...
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