Triggering process to reduce declared capacity of storage device in multi-storage-device storage system

Abstract

Systems, methods and / or devices are used to enable to trigger a process to reduce declared capacity of a storage device in a multi-storage-device storage system. In one aspect, the method includes: (1) obtaining, for each storage device of a plurality of storage devices of the storage system, one or more metrics of the storage device, the storage device including non-volatile memory, (2) detecting a trigger condition for reducing declared capacity of the non-volatile memory of a respective storage device of the plurality of storage devices, the trigger condition detected in accordance with the one or more metrics of one or more storage devices, and (3) enabling an amelioration process associated with the detected trigger condition, the amelioration process to reduce declared capacity of the non-volatile memory of the respective storage device. In some embodiments, the respective storage device includes one or more flash memory devices.

Description

technical field [0001] The disclosed embodiments relate generally to memory systems, and more specifically to triggering a process for reducing the declared capacity of a storage device in a multi-storage storage system (eg, including one or more flash memory devices). Background technique [0002] Semiconductor memory devices, including flash memory, typically utilize memory cells to store data as electrical values, such as charge or voltage. A flash memory cell, for example, includes a single transistor with a floating gate for storing charge representing a data value. Flash memory is a non-volatile data storage device that can be electrically erased and reprogrammed. More generally, in contrast to volatile memory, which requires power to maintain stored information even when power is lost, nonvolatile memory (such as flash memory and other types of nonvolatile memory) still retains the stored information. Various approaches have been taken to facilitate increases in st...

AI Technical Summary

Problems solved by technology

Eventually, the charge storage capability degrades to the point where it becomes impossible or impossible to recover the original data (e.g., an unrecoverable codeword is read from the flash device, computational resources required to recover the codeword exceed a predefined threshold, or The program erase (P / E) cycle count for the flash device exceeds the threshold) and the device is considered worn out

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