Nano-electromechanical device structure

Abstract

A nano-electromechanical device structure is provided. The nano-electromechanical device structure includes a substrate and an interconnect structure formed over the substrate. The nano-electromechanical device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer. The beam structure includes a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally. The nano-electromechanical device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device structure, and more particularly to a nanoelectromechanical (NEMS) device structure and a method for forming the same. Background technique [0002] Semiconductor devices are used in various electronic applications such as personal computers, cell phones, digital cameras, and other electronic equipment, for example. The manufacture of semiconductor devices is usually by sequentially depositing insulating layer or dielectric layer material, conductive layer material and semiconductor layer material on the semiconductor substrate, and then using photolithography to pattern the various material layers formed, so that the semiconductor substrate Circuit parts and components are formed thereon. Many integrated circuits are typically fabricated on a single semiconductor wafer, and the individual die on the wafer are diced by dicing between the integrated circuits along dicing lines. For ...

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Problems solved by technology

[0004] Although there are currently various devices and methods for forming nanoelectromechanical systems devices, however, these devices and methods have not been able to meet all requirements

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