32results about "Physical property improvement" patented technology

The invention belongs to the technical field of micro-nano optics, and particularly relates to a method for preparing a double-layer rectangular hole micro-nano structure generating asymmetric transmission. The method for preparing the double-layer rectangular hole micro-nano structure comprises the steps of configuration designing, substrate preparing, nickel plating, gold plating, medium plating, gold plating and bombardment. According to the method for preparing the double-layer rectangular hole micro-nano structure, all nano layers are firstly evaporated, then rectangular hole etching is precisely carried out through a focused ion beam (FIB), the problem that in the prior art, rectangular holes in the upper layer and the lower layer in a double-layer rectangular hole micro-nano structure are hard to calibrate due to the limit of technical and experimental errors is solved, and the advantages of simplifying the preparation process, reducing the preparation difficulty and reducing the cost are achieved.

The present invention relates to novel nano- and micro-electromechanical devices and novel methods of preparing them. In one aspect, the invention includes methods of preparing a nanodevice. In certain embodiments, the methods comprise coating a polymer layer with a first at least one thin solid material layer using atomic layer deposition (ALD), thus forming an ALD-generated layer. In other embodiments, the methods comprise patterning the first at least one thin solid material layer to form a nanodevice. In yet other embodiments, the methods comprise releasing the nanodevice from the polymer layer.

Described herein are metallic excavated nanoframes and methods for producing metallic excavated nanoframes. A method may include providing a solution including a plurality of excavated nanoparticles dispersed in a solvent, and exposing the solution to chemical corrosion to convert the plurality of excavated nanoparticles into a plurality of excavated nanoframes.

Processes for shaping one- and two-dimensional nanomaterials, and thereby inducing local strains therein preferably to control one or more of their material properties. The processes include providing a substrate comprising a three-dimensional surface feature thereon, locating a nanomaterial on the substrate and over the surface feature, and directing a laser beam toward the nanomaterial such that the nanomaterial experiences laser shock pressure sufficient to deform the nanomaterial to conform at least partially to the shape of the surface feature and adhere to the surface feature either directly or via an intermediate layer therebetween.

The present disclosure discloses the laminated ceramic chimp component including an element part having a ceramic main body and an internal electrode placed in the ceramic main body; an external electrode part having a first external electrode and a second external electrode, the first and second external electrodes being provided with side electrodes covering both side surfaces of the ceramic main body, respectively, upper electrodes covering portions of both sides of an upper surface of the ceramic main body, respectively, and lower electrodes covering portions of both sides of a lower surface of the ceramic main body, respectively; and a nano thin film layer formed of electric insulation material and applied to a region including the upper electrodes, the method for manufacturing the same and the atomic layer deposition apparatus for the same.

The invention discloses a plasmon effect-based electric field-assisted method for repairing self-morphology of Ag nanowires. A technological process that the light combined with an electric field is applied on the surface of the Ag nanowire is adopted. By means of a simple fluid spreading process, the Ag nanowire is placed between silver film electrodes by being stirred by an atomic force microscope probe, and the surface of an Ag nanowire sample located between the silver film electrodes is repaired by applying both the light and the electric field at the same time. The defect of the surface of the Ag nanowire at a depth of 10 nm can be repaired by the technology, the repaired surface morphology of the Ag nanowire is close to or reaches the original morphology, and a new technical means is provided for improving the repair accuracy and efficiency of metal nanostructure defects.

A method for forming porous metal structures and the resulting structure may include forming a metal structure above a substrate. A masking layer may be formed above the metal structure, and then etched using a reactive ion etching process with a mask etchant and a metal etchant. Etching the masking layer may result in the formation of a plurality of pores in the metal structure. In some embodiments, the metal structure may include a first end region, a second end region, and an intermediate region. Before etching the masking layer, a protective layer may be formed above the first end region and the second end region, so that the plurality of pores is contained within the intermediate region. In some embodiments, the intermediate metal region may be a nanostructure such as a nanowire.

Provided is a method for the fabrication of a nanoporous metal-based film. The method includes providing a ceramic aerogel substrate having a nanoporous structure. The substrate may include a bulk portion and a surface portion and the surface portion may be chemically or physically modified. The method may further include depositing a metal or a metal oxide from a deposition source on the ceramic aerogel substrate by a physical vapor deposition (PVD) process. The deposition may be performed at a power of less than about 90 W or at a current ranging from about 0.5 mA to about 100 mA. Further provided is a nanoporous metal-based film supported on a ceramic aerogel substrate having a nanoporous structure. The nanoporous structure of the aerogel defines the nanoporous structure of the metal-based film.

The invention provides a cluster ion beam nanometer processing equipment control device and a control method thereof. The cluster ion beam nanometer processing equipment control device comprises a system control board, a human-computer interaction module, a process control module, a data acquisition module, a nanometer processing control module and a material conveying module, and the human-computer interaction module, the process control module, the data acquisition module, the nanometer processing control module and the material conveying module are electrically connected to the system control board respectively. The invention further provides a control method of cluster ion beam nanometer processing equipment. The particle size of the nanocluster is detected in real time, and the material is unloaded when a set condition is met. According to the cluster ion beam nanometer processing equipment control device and the control method thereof, the consistency and the stability of the particle size of the nanocluster are achieved, the component deviation and the phase contamination are reduced to the greatest extent, and the dynamic response performance of a system is drastically improved.

The purpose of the present invention is to provide a fibrous carbon nanostructure dispersion that exhibits excellent dispersibility of a fibrous carbon nanostructure. This fibrous carbon nanostructuredispersion is characterized by comprising: a fibrous carbon nanostructure that has a mass reduction rate of 3.0 mass% or less as measured by thermogravimetric analysis in a nitrogen atmosphere when the temperature is increased from 23 to 200deg c at a temperature increase rate of 20deg c / min; and a solvent.

Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.

Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.

Embodiments of the present disclosure provide nanopore devices, such as nanopore sensors and / or other nanofluidic devices. In one or more embodiments, a nanopore device contains a substrate, an optional lower protective oxide layer disposed on the substrate, a membrane disposed on the lower protective oxide layer, and an optional upper protective oxide layer disposed on the membrane. The membrane has a pore and contains silicon nitride. The silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02 and the membrane has an intrinsic stress value of about −1,000 MPa to about 1,000 MPa. The nanopore device also contains a channel extending through at least the substrate, the lower protective oxide layer, the membrane, the upper protective oxide layer, and the upper protective silicon nitride layer.

A method for manufacturing a thin metal layer assembly includes forming a thin metal layer including nanopatterns on a preliminary substrate. The method includes forming a metal reducing layer by chemically reducing the thin metal layer. The method includes separating the metal reducing layer from the preliminary substrate. The method includes bonding the metal reducing layer to a target substrate.

The invention provides a method for eliminating wrinkles of a two-dimensional material and application of the method. The method comprises the steps that the two-dimensional material attached to a target substrate is soaked in an intercalation agent to be subjected to soaking treatment and annealing treatment, and elimination of the wrinkles of the two-dimensional material is completed. The method for eliminating the wrinkles of the two-dimensional material not only has the advantages of simple operation and high efficiency, but also has the advantage of little influence on the properties of the two-dimensional material; meanwhile, according to the method provided by the invention, the two-dimensional material wrinkles can be eliminated without special equipment and instruments in the operation process, the elimination success rate is very high, and a new thought is provided for realizing nondestructive transfer of the two-dimensional material.

Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.

The core-shell structured fiber-type strain sensor of the present disclosure, which includes a fibrous support forming a core and a multilayered shell layer formed on the fibrous support, exhibits improved strength and stiffness due to the core fiber, exhibits improved noise level due to an elastomer layer and allows manufacturing of a fiber-type sensor with improved linearity of measurement signals due to a sandwich-structured conductive layer, is advantageous in that stable strain measurement is possible without acting as a defect in a composite structure.

A nano-electromechanical device structure is provided. The nano-electromechanical device structure includes a substrate and an interconnect structure formed over the substrate. The nano-electromechanical device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer. The beam structure includes a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally. The nano-electromechanical device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

The invention discloses a displacement doping atomic scale wire, a preparation method and an application field. The atomic-scale wire is arranged on a semiconductor-property carbon-based material ( asemiconductor carbon nanotube or a semiconductor graphene nanoribbon); third-family, fourth-family or fifth-family elements are doped in a displacement manner by adopting an SPM and single ion implantation technology to form a wire having width of an atomic weight level; the wire can be used for connecting electronic devices of the atomic scale and used as interconnection of the large-scale integrated circuits of an atomic-scale thread to prepare corresponding integrated circuits.

The invention relates to a method of functionalizing surfaces of carbon nanomaterials using oxygen in the air. The method is clean and eco-friendly with virtually zero chemical usage and zero waste generation. The dispersion of the surface-functionalized carbon nanomaterials is excellent in organic solvents.