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Displacement doping atomic scale wire

A technology of atoms and wires, applied in the field of microelectronics, can solve problems such as non-self-supporting, poor repeatability, poor performance and stability of nanometer and molecular scale wires and devices

Inactive Publication Date: 2018-11-13
邵诗婷
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

People are making every effort to develop nanoelectronics science and technology, but with little success, so that at the beginning of this year, the voice of suggesting that the world's electronics industry turn to intelligent manufacturing has gradually risen
People mainly study nano-scale and molecular-scale wires and devices. The performance and stability of nano- and molecular-scale wires and devices are poor, and it is difficult to repeat. Atomic-scale wires and devices are rarely studied.
We are committed to the study of atomic-scale wires below the nanometer scale. The closest technology is the one-dimensional single-atom chain technology, but this one-dimensional single-atom chain is unstable, has poor repeatability, and cannot be self-supporting.

Method used

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  • Displacement doping atomic scale wire
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Experimental program
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Embodiment Construction

[0014] The substitutionally doped atomic wire is implemented as follows:

[0015] figure 1 It is a doping method, doping silicon atoms on (8,0) single-walled carbon nanotubes to form a current channel with a width of two atoms, which is used to transport electrons and connect atomic-scale devices. SPM scans along the axial direction of (8,0) single-walled carbon nanotubes to reach figure 1 When doping the doped grid point in the grid, apply an electric pulse with SPM to adsorb and transport the carbon atom on the designated grid point, and then adsorb and transport a doped silicon atom to the designated grid point, and apply an electric pulse The pulse fills the doped silicon atoms into the specified lattice point; then repeat this doping step to dope the next doped lattice point; after completing a row of doping parallel to the tube axis, move the SPM to the next row , repeat the doping steps of the previous row, for figure 1 Doping at the given lattice point; finally, a t...

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Abstract

The invention discloses a displacement doping atomic scale wire, a preparation method and an application field. The atomic-scale wire is arranged on a semiconductor-property carbon-based material ( asemiconductor carbon nanotube or a semiconductor graphene nanoribbon); third-family, fourth-family or fifth-family elements are doped in a displacement manner by adopting an SPM and single ion implantation technology to form a wire having width of an atomic weight level; the wire can be used for connecting electronic devices of the atomic scale and used as interconnection of the large-scale integrated circuits of an atomic-scale thread to prepare corresponding integrated circuits.

Description

1. Technical field [0001] The invention relates to a wire extending from the field of microelectronics and nanoelectronics to a smaller scale (atomic scale), a preparation method and an application. 2. Background technology [0002] With the shrinking of device size, the microelectronics industry is approaching its physical limit, and the corresponding Moore's law, which indicates the pace of development of the microelectronics industry, is also invalidated. People are making every effort to develop nanoelectronics science and technology, but with little success, so that at the beginning of this year, the voice of suggesting that the world's electronics industry turn to intelligent manufacturing has gradually risen. People mainly study nano-scale and molecular-scale wires and devices. The performance and stability of the obtained nano- and molecular-scale wires and devices are poor and difficult to repeat. Few people study atomic-scale wires and devices. We are committed to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B82B1/00B82B3/00
CPCB81C1/00015B82B1/001B82B1/005B82B3/0061B82B3/008
Inventor 不公告发明人
Owner 邵诗婷
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