Displacement doping atomic scale wire
A technology of atoms and wires, applied in the field of microelectronics, can solve problems such as non-self-supporting, poor repeatability, poor performance and stability of nanometer and molecular scale wires and devices
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[0014] The substitutionally doped atomic wire is implemented as follows:
[0015] figure 1 It is a doping method, doping silicon atoms on (8,0) single-walled carbon nanotubes to form a current channel with a width of two atoms, which is used to transport electrons and connect atomic-scale devices. SPM scans along the axial direction of (8,0) single-walled carbon nanotubes to reach figure 1 When doping the doped grid point in the grid, apply an electric pulse with SPM to adsorb and transport the carbon atom on the designated grid point, and then adsorb and transport a doped silicon atom to the designated grid point, and apply an electric pulse The pulse fills the doped silicon atoms into the specified lattice point; then repeat this doping step to dope the next doped lattice point; after completing a row of doping parallel to the tube axis, move the SPM to the next row , repeat the doping steps of the previous row, for figure 1 Doping at the given lattice point; finally, a t...
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