Plasmon effect-based electric field-assisted method for repairing self-morphology of Ag nanowires

A plasmonic and electric field-assisted technology, applied in the field of nano-repair, can solve the problems of crystal growth mode of metal particles controlled by structural characteristics, and achieve the effects of easy operation, high process precision and simple equipment requirements.
CN106904570AInactive Publication Date: 2017-06-30YANTAI NANSHAN UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
YANTAI NANSHAN UNIV
Publication Date
2017-06-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a plasmon effect-based electric field-assisted method for repairing self-morphology of Ag nanowires. A technological process that the light combined with an electric field is applied on the surface of the Ag nanowire is adopted. By means of a simple fluid spreading process, the Ag nanowire is placed between silver film electrodes by being stirred by an atomic force microscope probe, and the surface of an Ag nanowire sample located between the silver film electrodes is repaired by applying both the light and the electric field at the same time. The defect of the surface of the Ag nanowire at a depth of 10 nm can be repaired by the technology, the repaired surface morphology of the Ag nanowire is close to or reaches the original morphology, and a new technical means is provided for improving the repair accuracy and efficiency of metal nanostructure defects.
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Description

technical field

[0001] The invention belongs to the technical field of nano-repair, and in particular relates to a method for repairing the shape of the Ag nano-wire itself based on the plasmon effect in the preparation of the Ag nano-wire material. It specifically involves localized surface plasmon (LSP) excitation of the Ag nanowire defect site and heat generation at the excitation site, as well as the electric field-induced movement of the defect position in the metal liquid thin layer, and finally realizes a new process method for the repair of the Ag nanowire defect position .

[0002] technical background

[0003] With the development of nanophotonics and microelectronics, optoelectronic devices are developing toward intelligence and miniaturization. Therefore, the utilization of low-dimensional metal and non-metal micro-nano materials has become a hot topic in the world. Although a large number of metal nanostructures with different characteristics can be obtained thr...

Claims

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