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Plasmon effect-based electric field-assisted method for repairing self-morphology of Ag nanowires

A plasmonic and electric field-assisted technology, applied in the field of nano-repair, can solve the problems of crystal growth mode of metal particles controlled by structural characteristics, and achieve the effects of easy operation, high process precision and simple equipment requirements.

Inactive Publication Date: 2017-06-30
YANTAI NANSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although a large number of metal nanostructures with different characteristics can be obtained through cheap chemical means such as hydrothermal synthesis, the structural characteristics of metal micro-nanostructures are limited by the crystal growth mode of metal particles, and it is impossible to obtain arbitrary morphology characteristics according to requirements. metal nanostructure
At the same time, in the process of further separation, transfer and arrangement of metal nanomaterials, defects will inevitably be introduced into their materials.

Method used

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  • Plasmon effect-based electric field-assisted method for repairing self-morphology of Ag nanowires
  • Plasmon effect-based electric field-assisted method for repairing self-morphology of Ag nanowires
  • Plasmon effect-based electric field-assisted method for repairing self-morphology of Ag nanowires

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1. Cut the clean glass sheet into 2×3 cm samples, then soak in fatty alcohol polyoxyethylene ether sodium sulfate solution, ultrasonicate in 35°C water bath for 5 minutes; then rinse with deionized water for 3 times and soak in deionized Sonicate in water for 10 minutes.

[0032] 2. Take out the sample, soak it in acetone solution at room temperature for 5 minutes, take it out and rinse it with deionized water three times, dry it with nitrogen, and put it in a desiccator for later use.

[0033] 3. Place the above-prepared samples in an ozone generator for 30 min.

[0034] 4. Use a high-resolution magnetron ion sputtering device to coat a silver film on the surface of the glass under the conditions of a sputtering current of 20mA and a sputtering time of 150s.

[0035] 5. Under the protection of nitrogen atmosphere, the sample was annealed at 250°C for 0.5h. After annealing, a bright silver film could be observed on the glass surface.

[0036] 6. Using a probe with a d...

Embodiment 2

[0039] 1. Cut the clean glass sheet into 2×3 cm samples, then soak it in fatty alcohol polyoxyethylene ether sodium sulfate solution, and ultrasonicate it in a water bath at 35°C for 10 minutes; then rinse it with deionized water for 3 times and soak it in deionized Sonicate in water for 15 min.

[0040] 2. Take out the sample, soak it in acetone solution at room temperature for 10 minutes, take it out and rinse it with deionized water three times, dry it with nitrogen, and put it in a desiccator for later use.

[0041] 3. Place the above prepared sample in an ozone generating device for 15 minutes.

[0042] 4. Use a high-resolution magnetron ion sputtering device to coat a silver film on the surface of the glass under the conditions of a sputtering current of 15mA and a sputtering time of 200s.

[0043] 5. Under the protection of nitrogen atmosphere, the sample was annealed at 300°C for 1 hour, and a bright silver film could be observed on the glass surface after annealing. ...

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Abstract

The invention discloses a plasmon effect-based electric field-assisted method for repairing self-morphology of Ag nanowires. A technological process that the light combined with an electric field is applied on the surface of the Ag nanowire is adopted. By means of a simple fluid spreading process, the Ag nanowire is placed between silver film electrodes by being stirred by an atomic force microscope probe, and the surface of an Ag nanowire sample located between the silver film electrodes is repaired by applying both the light and the electric field at the same time. The defect of the surface of the Ag nanowire at a depth of 10 nm can be repaired by the technology, the repaired surface morphology of the Ag nanowire is close to or reaches the original morphology, and a new technical means is provided for improving the repair accuracy and efficiency of metal nanostructure defects.

Description

technical field [0001] The invention belongs to the technical field of nano-repair, and in particular relates to a method for repairing the shape of the Ag nano-wire itself based on the plasmon effect in the preparation of the Ag nano-wire material. It specifically involves localized surface plasmon (LSP) excitation of the Ag nanowire defect site and heat generation at the excitation site, as well as the electric field-induced movement of the defect position in the metal liquid thin layer, and finally realizes a new process method for the repair of the Ag nanowire defect position . [0002] technical background [0003] With the development of nanophotonics and microelectronics, optoelectronic devices are developing toward intelligence and miniaturization. Therefore, the utilization of low-dimensional metal and non-metal micro-nano materials has become a hot topic in the world. Although a large number of metal nanostructures with different characteristics can be obtained thr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00B82Y30/00B82Y40/00
CPCB82B3/008B82Y30/00B82Y40/00
Inventor 戴菡黄同瑊房洪杰赵俊凤孙杰张涛刘慧王美春
Owner YANTAI NANSHAN UNIV
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