Plasmon effect-based electric field-assisted method for repairing self-morphology of Ag nanowires
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- YANTAI NANSHAN UNIV
- Publication Date
- 2017-06-30
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of nano-repair, and in particular relates to a method for repairing the shape of the Ag nano-wire itself based on the plasmon effect in the preparation of the Ag nano-wire material. It specifically involves localized surface plasmon (LSP) excitation of the Ag nanowire defect site and heat generation at the excitation site, as well as the electric field-induced movement of the defect position in the metal liquid thin layer, and finally realizes a new process method for the repair of the Ag nanowire defect position .
[0002] technical background
[0003] With the development of nanophotonics and microelectronics, optoelectronic devices are developing toward intelligence and miniaturization. Therefore, the utilization of low-dimensional metal and non-metal micro-nano materials has become a hot topic in the world. Although a large number of metal nanostructures with different characteristics can be obtained thr...