memory device
A storage device and storage unit technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as lowering mass production rate and deteriorating reliability of storage devices
Active Publication Date: 2019-09-27
SAMSUNG ELECTRONICS CO LTD
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, due to downsizing of memory devices, various defects are generated during the process of manufacturing the memory devices, thereby deteriorating the reliability of the memory devices and reducing mass productivity
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0026] Hereinafter, the present invention will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the inventive concept are shown.
[0027] figure 1 is an equivalent circuit diagram of the memory device 100 according to an exemplary embodiment.
[0028] refer to figure 1 , the memory device 100 may include lower word lines WL11 and WL12 and upper word lines WL21 and WL22. The lower word lines WL11 and WL12 can be in the first direction (ie figure 1 in the X direction) and extend in the second direction perpendicular to the first direction (ie figure 1 in the Y direction) are spaced apart from each other. The upper word lines WL21 and WL22 may extend in a first direction (ie, an X direction), be spaced apart from each other in a second direction (ie, a Y direction) perpendicular to the first direction, and be further spaced apart from each other in a third direction perpendicular to the first direction. direction (ie fig...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present disclosure provides a memory device. The storage device includes: a first electrode line layer including a plurality of first electrode lines extending on the substrate in a first direction and spaced apart from each other; a second electrode line layer including a plurality of first electrode lines extending in a second direction on the first electrode line a plurality of second electrode lines extending on the layer and spaced apart from each other, the second direction being different from the first direction; and a memory cell layer comprising a plurality of electrode lines between the plurality of first electrode lines and the plurality of second electrode lines A plurality of first memory cells at the intersection, each first memory cell includes a sequentially stacked selection device layer, an intermediate electrode, and a variable resistance layer. Side surfaces of the variable resistance layer are perpendicular to the top surface of the substrate or are inclined to be gradually wider toward an upper portion of the variable resistance layer. The first storage unit has a side surface slope to have a gradually decreasing width toward an upper portion thereof.
Description
technical field [0001] The disclosed concept relates to a memory device and method of manufacturing the same, and more particularly, to a memory device having a stacked cross-point array structure and method of manufacturing the same. Background technique [0002] Since there is a growing trend to make electronic products lightweight, thin, and small in size, the demand for highly integrated semiconductor devices has increased. In addition, memory devices having a stacked cross-point array structure in which memory cells are located at intersections between two electrodes intersecting each other have been proposed. However, due to the increasing demand for downscaling of a memory device having a stacked cross-point array structure, there is a need to reduce the size of all layers included in the memory device. However, due to downsizing of memory devices, various defects are generated during the process of manufacturing the memory devices, thereby deteriorating the reliabil...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/20H10N70/011G11C2213/15G11C2213/52G11C2213/76G11C2213/79G11C13/0004G11C2213/71G11C2213/72H10B63/24H10B63/84H10N70/231H10N70/8413H10N70/8616H10N70/826H10N70/8828H10N70/063H10B69/00H10B63/32G11C13/0023G11C13/004G11C13/0069
Inventor 郑智贤高宽协姜大焕
Owner SAMSUNG ELECTRONICS CO LTD