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Solid-state imaging device and electronic equipment

A solid-state imaging device and electrode technology, which is applied in the direction of electric solid-state devices, radiation control devices, televisions, etc., can solve the problems of saturation signal volume and reduction, and achieve the effect of improving saturation characteristics

Active Publication Date: 2021-02-19
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the above configuration cannot solve the phenomenon that the saturation signal amount decreases with time when the mechanical shutter operates

Method used

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  • Solid-state imaging device and electronic equipment
  • Solid-state imaging device and electronic equipment
  • Solid-state imaging device and electronic equipment

Examples

Experimental program
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Effect test

Deformed example 1

[0076] Figure 10 with Figure 11 Another configuration example of the pixel 11 is illustrated. Figure 10 is a plan view illustrating this configuration example of the pixel 11 . Figure 11 yes Figure 10 shown in Pixel 11 with image 3 The sectional view corresponding to the sectional view.

[0077] At the same time, in Figure 10 with Figure 11 , are designated with the same reference numerals as the image 3 with Figure 4 constructions similar to those in , and descriptions of these constructions are omitted.

[0078] The transfer gate electrode 51 is obtained by integrally forming the planar gate electrode 51A and the vertical gate electrodes 51B- 1 , 51B- 2 , and 51B- 3 . The planar gate electrode 51A is formed across the PD 32 and the FD 34 on the semiconductor substrate 31 . The vertical gate electrodes 51B- 1 , 51B- 2 , and 51B- 3 are formed to have a columnar shape in the depth direction from the surface of the semiconductor substrate 31 in a region betwe...

Deformed example 2

[0082] Figure 12 with Figure 13 Still another configuration example of the pixel 11 is illustrated. Figure 12 is a plan view illustrating this configuration example of the pixel 11 . Figure 13 yes Figure 12 shown in Pixel 11 with image 3 The sectional view corresponding to the sectional view.

[0083] At the same time, in Figure 12 with Figure 13 , are designated with the same reference numerals as the image 3 with Figure 4 constructions similar to those in , and descriptions of these constructions are omitted.

[0084] The transfer gate electrode 61 is obtained by integrally forming the planar gate electrode 61A and the vertical gate electrodes 61B- 1 , 61B- 2 , and 61B- 3 . The planar gate electrode 61A is formed across the PD 32 and the FD 34 on the semiconductor substrate 31 . The vertical gate electrodes 61B- 1 , 61B- 2 , and 61B- 3 are formed to have a columnar shape in the depth direction from the surface of the semiconductor substrate 31 below the p...

Deformed example 3

[0088] Figure 14 with Figure 15 Still another configuration example of the pixel 11 is illustrated. Figure 14 is a plan view illustrating this configuration example of the pixel 11 . Figure 15 yes Figure 14 shown in Pixel 11 with image 3 The sectional view corresponding to the sectional view.

[0089] At the same time, in Figure 14 with Figure 15 , are designated with the same reference numerals as the image 3 with Figure 4 constructions similar to those in , and descriptions of these constructions are omitted.

[0090] The transfer gate electrode 71 is obtained by integrally forming the planar gate electrode 71A and the vertical gate electrodes 71B- 1 , 71B- 2 , and 71B- 3 . The planar gate electrode 71A is formed across the PD 32 and the FD 34 on the semiconductor substrate 31 . The vertical gate electrodes 71B- 1 , 71B- 2 , and 71B- 3 are formed to have a columnar shape in the depth direction from the surface of the semiconductor substrate 31 below the p...

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Abstract

The present technology relates to a solid-state imaging device and electronic equipment capable of improving saturation characteristics. A photodiode is formed on a substrate, and a floating diffusion accumulates signal charges read from the photodiode. A plurality of vertical gate electrodes are formed in a depth direction from a surface of the substrate in a region between the photodiode and the floating diffusion. An overflow path is formed in a region sandwiched by the plurality of vertical gate electrodes. The present technology can be applied to a CMOS image sensor.

Description

technical field [0001] The present technology relates to solid-state imaging devices and electronic equipment, and more particularly, to solid-state imaging devices and electronic equipment capable of improving saturation characteristics. Background technique [0002] Generally, there is known a solid-state image sensor provided with a transfer gate electrode obtained by integrally forming a planar gate electrode and a vertical gate electrode. [0003] As one of such solid-state image sensors, there has been proposed a solid-state image sensor in which vertical gate electrodes are unevenly arranged in the gate width direction (for example, see Patent Document 1). According to this configuration, the potential of the overflow path can be controlled, and the blooming characteristic can be improved. [0004] Citation list [0005] patent documents [0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2013-26264 Contents of the invention [0007] The techni...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H04N5/374H04N23/75
CPCH01L27/14643H01L27/14614H01L27/14656H04N23/75H04N25/57H04N25/622H04N25/76
Inventor 城户英男
Owner SONY CORP
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