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Method and device for short circuit detection in power semiconductor switches

A semiconductor and device technology, applied in the field of short circuit detection, can solve problems such as unsuitable semiconductor switches and short circuits

Active Publication Date: 2020-06-16
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this approach is not suitable for all semiconductor switching and short-circuit situations

Method used

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  • Method and device for short circuit detection in power semiconductor switches
  • Method and device for short circuit detection in power semiconductor switches
  • Method and device for short circuit detection in power semiconductor switches

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Embodiment Construction

[0020] Various embodiments will be discussed in detail below with reference to the accompanying drawings. These examples are given by way of example only and are not to be construed in a limiting sense. For example, describing an embodiment as having a number of features or components is not to be construed as indicating that all such features or components are necessary to practice the embodiment. Alternatively, some of the described features or components may be omitted and / or may be replaced by alternative features or components in other embodiments. Furthermore, other features or components may be provided in addition to those expressly shown and described, such as those conventionally used in power semiconductor devices and associated circuits.

[0021] Features or components from various implementing embodiments may be combined to form further embodiments. Modifications or variants described with respect to one of the embodiments may also apply to the other embodiments...

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Abstract

Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.

Description

technical field [0001] The present application relates to short circuit detection for power semiconductor switches. Background technique [0002] Power semiconductor switching devices such as power metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs) are used to switch high voltages and / or currents. In the automotive field, for example, such power semiconductor switches can be used to selectively couple electric motors with supply voltages of the order of a few hundred volts, with correspondingly high currents of the order of 10 A or more. For example in the event of a short circuit in a load coupled to the switch, extremely high currents may flow due to the high voltage, which may damage or even destroy the semiconductor switching device. Therefore, it is desirable to detect such a short circuit condition and take appropriate steps, such as opening (switching off) the semiconductor switching device, thereby interrupting...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26G01R31/27G01R31/52G01R31/56
CPCG01R31/2607G01R31/2608G01R31/2621G01R31/27G01R31/3277G01R31/42G05F1/573H03K17/08128H03K17/0828H03K17/0826
Inventor M-M.巴克兰S.海因A.毛德
Owner INFINEON TECH AG