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A kind of photoresist composition and preparation method

A composition and photoresist technology, applied in the field of polymers, can solve the problems of high dielectric constant k and low transparency

Active Publication Date: 2020-05-12
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the traditional method, SiNx is generally used as the passivation layer of TFT. Due to its high dielectric constant k and low transparency, the capacitive resistance delay (RC delay) has become the bottleneck of high aperture ratio; now more materials with low dielectric constant are used. To replace or cooperate with SiNx as a passivation layer, diazonaphthoquinone resin materials are currently used more
[0004] However, there is currently no resin material or resin composition that can perform double exposure to achieve finer pattern preparation.

Method used

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  • A kind of photoresist composition and preparation method
  • A kind of photoresist composition and preparation method
  • A kind of photoresist composition and preparation method

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Embodiment approach

[0035] According to one embodiment of the present invention, the diphenylamine diazo resin has the following structure:

[0036]

[0037] Wherein, n is an integer selected from 2-1000; preferably from 2-100, more preferably from 2-10, for example selected from 2, 4, 6, 8 or 10, W is methylene, X is selected from hydrogen, methoxy Base or methyl, Y is nitro, Z is selected from methyl or ethyl, R - Anion selected from hexafluorophosphate, dodecylbenzenesulfonate, dodecylsulfonate, p-toluenesulfonate, mesitylenesulfonate or naphthalenesulfonate.

[0038] According to one embodiment of the present invention, wherein, n is 6, R - It is the anion of mesitylenesulfonate, X is H, and Z is methyl.

[0039] The preparation method of diphenylamine diazo resin

[0040] The synthetic route of N-ethyl 2-nitrodiphenylamine 4-diazonium salt is as follows:

[0041]

[0042] 1) Add 300g (1.49mol) of 2,4-dinitrochlorobenzene to 1485mL of absolute ethanol, heat to dissolve, then add 173...

Embodiment 1

[0063] The photoresist composition comprises: 0.02 parts by weight of basic brilliant blue, 30 parts by weight of epoxy resin, 1.5 parts by weight of diazonaphthoquinone resin BP207, diphenylamine diazo resin (wherein, n=2, W is CH 2 , R - is dodecylsulfonate anion, X is methoxy, Y is nitro, Z is methyl) 5.5 parts by weight, and ethylene glycol monomethyl ether is 62.8 parts by weight.

[0064] The preparation method of photoresist composition: dissolve 0.02g basic brilliant blue in 62.8g ethylene glycol monomethyl ether, then add 1.5 parts by weight of diazonaphthoquinone resin, 5.5g diphenylamine diazo resin, 30g epoxy resin, dissolved and filtered with filter paper to obtain the photoresist composition of Example 1.

Embodiment 2

[0066] The photoresist composition comprises: 2 parts by weight of crystal violet, 25 parts by weight of polyurethane resin, 1 part by weight of diazonaphthoquinone resin BP2101, diphenylamine diazo resin (wherein, n=6, W is CH 2 , R - is mesitylenesulfonate anion, X is hydrogen, Y is nitro, Z is methyl) 4 parts by weight, propylene glycol monoethyl ether 68 parts by weight.

[0067] The preparation method of photoresist composition: dissolve 2g crystal violet in 68g propylene glycol monoethyl ether, then add 4g diphenylamine diazo resin, 1g diazonaphthoquinone resin, 25g polyurethane resin successively, dissolve and filter with filter paper, obtain embodiment 2 photoresist composition.

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Abstract

The invention relates to the technical field of polymers and particularly relates to a photoresist composition and a preparation method thereof. The photoresist composition comprises 30 to 45 parts by weight of a resin, 0.02 to 0.2 parts by weight of a background dye and 55 to 70 parts by weight of an organic solvent. The resin comprises a photosensitive resin and a film-formation resin. The photosensitive resin comprises diazonaphthoquinone resin and diphenylamine diazoresin.

Description

technical field [0001] The invention relates to the technical field of polymers, in particular to a photoresist composition and a preparation method. Background technique [0002] Photoresists are key functional materials for photolithography processes in the large-scale integrated circuit industry. After the photoresist is irradiated by ultraviolet light, a series of chemical reactions occur, which changes the dissolution rate of the photoresist in the developer before and after exposure, and then through the processes of developing, hardening, etching and removing the film, the specific high Precision graphics are transferred to the substrate surface to be processed. [0003] In the traditional method, SiNx is generally used as the passivation layer of TFT. Due to its high dielectric constant k and low transparency, the capacitive resistance delay (RC delay) has become the bottleneck of high aperture ratio; now more materials with low dielectric constant are used. To rep...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/023G03F7/021
CPCG03F7/021G03F7/023
Inventor 赵磊汪建国
Owner BOE TECH GRP CO LTD
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