Aqueous and semi-aqueous cleaners for the removal of post-etch residues with tungsten and cobalt compatibility

Abstract

Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and / or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and / or capping layers also present thereon.

Description

technical field [0001] The present invention relates to compositions for removing post-etch residues comprising titanium-containing post-etch residues, cobalt-containing post-etch residues, tungsten-containing post-etch residues, and / or copper-containing post-etch residues from microelectronic devices and Methods of making and using the compositions. Background technique [0002] An interconnect circuit in a semiconductor circuit consists of a conductive metal circuit surrounded by an insulating dielectric material. In the past, silicate glass vapor-deposited from tetraethylorthosilicate (TEOS) was widely used as the dielectric material, while aluminum alloys were used for the metal interconnects. The demand for higher processing speeds has caused the size of circuit elements to become smaller and TEOS and aluminum alloys to be replaced by higher performance materials. Due to the higher electrical conductivity of copper, aluminum alloys have been replaced with copper or co...

AI Technical Summary

Problems solved by technology

To date, no single wet cleaning composition has successfully removed all residual material while being compatible with ILDs, other low-k dielectric materials, and metal interconnect materials

Images