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A high-power power controller

A technology of power controller and high-power power supply, which is applied in the direction of control/regulation system, output power conversion device, instrument, etc., and can solve the problems of reducing the bandwidth of the control system, increasing the delay time, and large switching loss

Active Publication Date: 2019-05-31
SHENZHEN AEROSPACE NEW POWER TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] 1. When the MOSFET is turned on, the parasitic capacitance C SA discharge by It can be seen that a high peak current will inevitably be generated at the moment of turn-on. At this time, it is necessary to design a current sink device to reduce the current peak. More importantly, it will cause a large switching loss and reduce efficiency.
[0004] 2. Increasing the delay time caused by parasitic capacitance will reduce the DC characteristics of the bus, reduce the bandwidth of the entire control system, increase the output impedance, and weaken the dynamic response of the system

Method used

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  • A high-power power controller
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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0028] The invention is a battery high-power power supply controller with high power density and adaptable to three-junction gallium arsenide multi-section solar energy. as attached figure 1 As shown, the high-power power supply controller of the present invention includes an SR main power part, a driving and hysteresis control unit and a protection circuit; wherein, the SR main power part adopts a MOSFET tube shunt and a diode series mechanism, and the MOSFET tube adopts a two-group series connection mode , the diodes are connected in parallel at both ends of the MOSFET tube, and the drive and hysteresis control units use two sets, respectively controlling the upper and lower MOSFET tubes connected in series; The output end of the inductance-plus-resistance-capacitance absorption circuit is connected to the main power part of the SR. The out...

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Abstract

The invention provides a large power power supply controller which includes a shunting regulator SR main power part, a drive and hysteresis control unit and a protection circuit. The SR main power part uses MOSFETs to perform shunting and have diodes in series connection. Two MOSFETs are in series connection. Two diodes are in respective connection to two ends of the two MOSFETs. The drive and hysteresis control unit uses two sets which separately control two MOSFETs which are in up and down series connection. A solar array positive line is connected to an input end of a limiting inductance added resistance-capacitance absorption circuit, and an output end of the limiting inductance added resistance-capacitance absorption circuit is connected to the SR main power part. An output end of the limiting inductance added resistance-capacitance absorption circuit is connected to a bus positive line through a rectifier diode. No matter which route of MOSFETs has fault, the waveform of a bus voltage and the wave form of a shunting route current are not influenced. According to the invention, the technical solution can achieve higher reliability of SR shunting, and reduces the temperature of an adjusting route MOSFET by being in series connection to the MOSFETs.

Description

technical field [0001] The invention belongs to the technical field of power supply controllers, and in particular relates to a high-power power supply controller. Background technique [0002] With the further improvement of the power density of the new-generation power controller system and the introduction of triple-junction gallium arsenide (GaAs) multi-cell solar cells, the design of S3R regulation technology has become more complicated, and the use of "gallium arsenide (GaAs) three Compared with traditional silicon arrays (18%), solar arrays with direct regulation technology (28%) have higher efficiency, weight and volume are correspondingly reduced, etc., but its parasitic parameters are significantly increased. The increase of parasitic parameters will bring the following problems: [0003] 1. When the MOSFET is turned on, the parasitic capacitance C SA discharge by It can be seen that a high peak current will inevitably be generated at the moment of turning on. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/155H02H7/12
CPCY02E10/56
Inventor 朱洪雨张博温刘青张东来
Owner SHENZHEN AEROSPACE NEW POWER TECH